AP2305AN A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS -30V ▼ ▼ ▼ ▼ Small Package Outline RDS(ON) 80mΩ ▼ ▼ ▼ ▼ Surface Mount Device ID - 3.2A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient 3 Max. 90 ℃/W Data and specifications subject to change without notice -55 to 150 Linear Derating Factor Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range 1.38 -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 -2.6 Pulsed Drain Current1,2 -10 200731031 AP2305AN Rating - 30 ± 12 -3.2 0.01 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S D G S SOT-23

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 -V / ℃ RDS(ON) Static Drain-Source On-Resistance V GS=-10V, ID=-3.2A - - 60 mΩ VGS=-4.5V, ID=-3.0A - - 80 mΩ VGS=-2.5V, ID=-2.0A - - 150 mΩ VGS=-1.8V, ID=-1.0A - - 250 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.5 - -1.2 V gfs Forward Transconductance V DS=-5V, ID=-3.0A - 9 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=-3.2A - 10 18 nC Qgs Gate-Source Charge V DS=-24V - 1.8 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 3.6 - nC td(on) Turn-on Delay Time2 VDS=-15V - 7 - ns tr Rise Time I D=-3.2A - 15 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 21 - ns tf Fall Time R D=4.6Ω -1 5- ns Ciss Input Capacitance V GS=0V - 735 1325 pF Coss Output Capacitance V DS=-25V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-3.2A, VGS=0V, - 24 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 19 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. ± 12V ±100

65mΩ Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -3.0A V GS = -4.5V 0123456789 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -4.0V T A =25 o C -5.0V -3.0V V G = -2.0V 01234567 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) V G = -2.0V -4.0V -5.0V -3.0V T A =150 o C 0.01 0.1 100 0 0.4 0.8 1.2 1.6 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.5 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V) 100 200 300 02468 1 0 1 2 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D = -1.0A T A =25 o C

65mΩ Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedanc e Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) 0.01 0.05 0.1 0.2 DUTY=0.5 Single pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja = 270℃℃℃℃/W 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 02468 1 0 1 2 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -3.2A V DS = -24V