AP2304GN-HF A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 25V ▼ Small package outline RDS(ON) 117mΩ ▼ Surface mount package ID 2.7A ▼ RoHS Compliant & Halogen-Free

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 90 ℃/W Data and specifications subject to change without notice AP2304GN-HF Halogen-Free Product Parameter Rating Drain-Source Voltage 25 Gate-Source Voltage + Continuous Drain Current3, VGS @ 10V 2.7 Continuous Drain Current3, VGS @ 10V 2.2 Pulsed Drain Current1 10 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.01 Storage Temperature Range Total Power Dissipation 1.38 -55 to 150 200908315 Thermal Data Parameter G D S D G S SOT-23 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 25 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=2.5A - - 117 m Ω VGS=4.5V, ID=2A - - 190 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=4.5V, ID=2.5A - 3.4 - S IDSS Drain-Source Leakage Current VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=55oC) VDS=20V ,VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=2.5A - 5.9 10 nC Qgs Gate-Source Charge V DS=15V - 0.8 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 2.1 - nC td(on) Turn-on Delay Time2 VDS=15V - 4.5 - ns tr Rise Time I D=1A - 11.5 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=10V - 12 - ns tf Fall Time R D=15Ω -3- ns Ciss Input Capacitance V GS=0V - 110 - pF Coss Output Capacitance V DS=15V - 85 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 39 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 1 A ISM Pulsed Source Current ( Body Diode )1 -- 1 0 A VSD Forward On Voltage2 IS=1.25A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C V GS =3V V GS =10V - 5V V GS =4V 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C V GS =4V V GS =10V - 5V V GS =3V 100 200 300 400 500 600 700 02468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2A T A =25 ℃ 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V GS =10V I D =2.5A 0.1 0.5 0.9 1.3 V SD , Source-to-Drain Voltage (V) IF (A) T j =25 o CT j =150 o C 1.45 1.65 1.85 2.05 2.25 -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V)

Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃/W t T 0123456 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V I D =2.5A 100 1000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge