AP2304GN A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS 25V ▼ ▼ ▼ ▼ Small package outline RDS(ON) 117mΩ ▼ ▼ ▼ ▼ Surface mount package ID 2.7A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 90 ℃/W Data and specifications subject to change without notice 200420043 AP2304GN Pb Free Plating Product Parameter Rating Drain-Source Voltage 25 Gate-Source Voltage ±20 Continuous Drain Current 3, VGS @ 4.5V 2.7 Continuous Drain Current3, VGS @ 4.5V 2.2 Pulsed Drain Current1,2 10 Total Power Dissipation 1.38 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.01 Thermal Data Parameter Storage Temperature Range G D S D G S SOT-23 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 25 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=2.5A - 117 mΩ VGS=4.5V, ID=2A - 190 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=4.5V, ID=2.5A - 3.4 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=55oC) VDS=25V ,VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=±20V - - nA Qg Total Gate Charge2 ID=2.5A - 5.9 10 nC Qgs Gate-Source Charge V DS=15V - 0.8 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 2.1 - nC td(on) Turn-on Delay Time2 VDS=15V - 4.5 - ns tr Rise Time I D=1A - 11.5 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=10V - 12 - ns tf Fall Time R D=15Ω -3- ns Ciss Input Capacitance V GS=0V - 110 - pF Coss Output Capacitance V DS=15V - 85 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 39 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 1 A ISM Pulsed Source Current ( Body Diode )1 -- 1 0 A VSD Forward On Voltage2 IS=1.25A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C V GS =3V V GS =10V - 5V V GS =4V 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C V GS =4V V GS =10V - 5V V GS =3V 100 200 300 400 500 600 700 02468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =2A T A =25 ℃℃℃℃ 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V GS =10V I D =2.5A 0.1 0.5 0.9 1.3 V SD , Source-to-Drain Voltage (V) IF (A) T j =25 o CT j =150 o C 1.45 1.65 1.85 2.05 2.25 -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V)

Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1s 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃℃℃℃/W t T 0123456 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V I D =2.5A 100 1000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge