AP2303N A-POWER | Alldatasheet

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P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -30V ▼ Small Package Outline RDS(ON) 240mΩ ▼ Surface Mount Device ID - 1.9A

Description

V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG TJ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient3 Max. ℃/W Data and specifications subject to change without notice 200407042 AP2303N Rating - 30 ± 20 -1.9 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 -1.5 Pulsed Drain Current1,2 -10 1.38 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.01 Storage Temperature Range Thermal Data Parameter Total Power Dissipation The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S D G S SOT-23

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA -0.1 V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-1.7A 240 mΩ VGS=-4.5V, ID=-1.3A 460 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA V gfs Forward Transconductance VDS=-10V, ID=-1.7A S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V uA Drain-Source Leakage Current (Tj=70oC) VDS=-30V, VGS=0V -10 uA IGSS Gate-Source Leakage VGS= nA Qg Total Gate Charge2 ID=-1.7A 6.2 nC Qgs Gate-Source Charge VDS=-15V 1.4 nC Qgd Gate-Drain ("Miller") Charge VGS=-10V 0.3 nC td(on) Turn-on Delay Time2 VDS=-15V 7.6 ns tr Rise Time ID=-1A 8.2 ns td(off) Turn-off Delay Time RG=6Ω,VGS=-10V 17.5 ns tf Fall Time RD=15Ω ns Ciss Input Capacitance VGS=0V 230 pF Coss Output Capacitance VDS=-15V 130.4 pF Crss Reverse Transfer Capacitance f=1.0MHz pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V A ISM Pulsed Source Current ( Body Diode )1 -10 A VSD Forward On Voltage2 IS=-1.25A, VGS=0V -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. AP2303N ± 20V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C V G =-4.0V -10V -8.0V -6.0V -5.0V 100 150 200 250 -V GS , Gate-to-Source Voltage (V) RDSON (mΩ Ω Ω I D =-1.3A T A =25 ℃ 0.6 0.8 1.2 1.4 1.6 1.8 -50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G = -10V I D =-1.7A -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -8.0V -6.0V -5.0V V G =-4.0V 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD , Source-to-Drain Voltage (V) -IF(A) T j =25 o C T j =150 o C -50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP2303N 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃ ℃/W t T Single Pulse 0.01 0.1 100 0.1 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -1.7A V DS = -15V 100 1000 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off)tf VDS VGS 10% 90% Q VG -10V QGS QGD QG Charge