AP2303GN A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS -30V ▼ ▼ ▼ ▼ Small Package Outline RDS(ON) 240mΩ ▼ ▼ ▼ ▼ Surface Mount Device ID - 1.9A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 90 ℃/W Data and specifications subject to change without notice Pb Free Plating Product Thermal Data Parameter Total Power Dissipation 1.38 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor Storage Temperature Range Continuous Drain Current3 -1.5 Pulsed Drain Current1,2 -10 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 200407042 AP2303GN Rating - 30 ± 20 -1.9 0.01 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S D G S SOT-23

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-1.7A - - 240 mΩ VGS=-4.5V, ID=-1.3A - - 460 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - - V gfs Forward Transconductance V DS=-10V, ID=-1.7A - 2 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-30V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=-1.7A - 6.2 - nC Qgs Gate-Source Charge V DS=-15V - 1.4 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 0.3 - nC td(on) Turn-on Delay Time2 VDS=-15V - 7.6 - ns tr Rise Time I D=-1A - 8.2 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=-10V - 17.5 - ns tf Fall Time R D=15Ω -9- ns Ciss Input Capacitance V GS=0V - 230 - pF Coss Output Capacitance V DS=-15V - 130.4 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1 A ISM Pulsed Source Current ( Body Diode )1 - - -10 A VSD Forward On Voltage2 IS=-1.25A, VGS=0V - - -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. AP2303GN ± 20V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C V G =-4.0V -10V -8.0V -6.0V -5.0V 100 150 200 250 3579 1 1 -V GS , Gate-to-Source Voltage (V) RDSON (m ΩΩΩΩ) I D =-1.3A T A =25 ℃℃℃℃ 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G = -10V I D =-1.7A 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -8.0V -6.0V -5.0V V G =-4.0V -V SD , Source-to-Drain Voltage (V) -IF(A) T j =25 o CT j =150 o C -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedanc e Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP2303GN 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) 0.01 0.05 0.1 0.2 Duty factor=0.5 PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃℃℃℃/W t T Single Pulse 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 02468 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -1.7A V DS = -15V 100 1000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off)tf VDS VGS 10% 90% Q VG -10V QGS QGD QG Charge