AP2302N A-POWER | Alldatasheet

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N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 2.5V gate drive BVDSS 20V ▼ Small package outline RDS(ON) 85mΩ ▼ Surface mount package ID 3.2A

Description

V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG TJ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient3 Max. ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 1.38 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.01 Continuous Drain Current3, VGS @ 4.5V 2.6 Pulsed Drain Current1,2 Gate-Source Voltage ±12 Continuous Drain Current3, VGS @ 4.5V 3.2 Parameter Rating Drain-Source Voltage 200503044 AP2302N G D S D G S SOT-23 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA 0.1 V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=3.6A mΩ VGS=2.5V, ID=3.1A 115 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 1.2 V gfs Forward Transconductance VDS=5V, ID=3.6A S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V uA Drain-Source Leakage Current (Tj=70oC) VDS=20V ,VGS=0V uA IGSS Gate-Source Leakage VGS=±12V nA Qg Total Gate Charge2 ID=3.6A 4.4 nC Qgs Gate-Source Charge VDS=10V 0.6 nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V 1.9 nC td(on) Turn-on Delay Time2 VDS=10V 5.2 ns tr Rise Time ID=3.6A ns td(off) Turn-off Delay Time RG=6Ω,VGS=5V ns tf Fall Time RD=2.8Ω 5.7 ns Ciss Input Capacitance VGS=0V 145 pF Coss Output Capacitance VDS=10V 100 pF Crss Reverse Transfer Capacitance f=1.0MHz pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V A ISM Pulsed Source Current ( Body Diode )1 A VSD Forward On Voltage2 IS=1.6A, VGS=0V 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. AP2302N ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 V GS , Gate-to-Source Voltage (V) RDS(ON) (mΩ Ω Ω I D = 3.1 A T A =25 o C 0.0 0.5 1.0 1.5 2.0 2.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C V G =2.0V 4.5V 3.5V 3.0V 2.5V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =4.5V I D =3.6A 0.0 0.5 1.0 1.5 2.0 2.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C V G =2.0V 4.5V 3.5V 3.0V 2.5V 0.1 1.0 10.0 0.1 0.5 0.9 1.3 V SD , Source-to-Drain Voltage (V) IF (A) T j =25 o C T j =150 o C 0.2 0.6 1.0 1.4 -50 100 150 T j , Junction Temperature ( o C) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP2302N 0.01 0.1 100 0.1 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃ ℃/W t T Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =3.6A V DS =4.5V 100 1000 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on)tr td(off)tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge