AP2302L BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

Support Both DDR I (1.25VTT) and DDR II (0.9VTT) Requirements Source and Sink Current up to 2A High Accuracy Output Voltage at Full-load Adjustable VOUT by External Resistors Shutdown for Standby or Suspend Mode Operation with High-impedance Output

Applications

Reference Voltage Input and Chip Enable. Figure 2. Pin Configuration of AP2302L (Top View)

7 VCNTL

6 VCNTL

5 VCNTL

8 VCNTL

2A DDR TERMINATION REGULATOR AP2302L Preliminary Datasheet Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Functional Block Diagram Figure 3. Functional Block Diagram of AP2302L

Ordering Information

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Circuit Type Package BANDGAP START UP CURRENT LIMIT THERMAL PROTECT OUTPUT CONTROL REFEN VIN VCNTL(TAB) GND VOUT 1 (1) 2 (2) 5,6,7,8 (3) 3 (4) 4 (5) A(B) A for SOIC-8 B for TO-252-5 M: SOIC-8 D: TO-252-5 AP2302L - E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube

2A DDR TERMINATION REGULATOR AP2302L Preliminary Datasheet Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Absolute Maximum Ratings (Note 1) Recommended Operating Conditions Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Parameter Symbol Value Unit Supply Voltage for Internal Circuit VCNTL V Power Dissipation PD Internally Limited W ESD (Human Body Model) ESD KV Storage Temperature Range TSTG -65 to 150 oC Lead Temperature (Soldering, 5sec) TLEAD 260 oC Package Thermal Resistance (Free Air) θJC SOIC-8 oC/W TO-252-5 Parameter Symbol Min Typ Max Unit Supply Voltage for Internal Circuit VCNTL (Note 2, 3) 3.3 V Power Input DDR I VIN 1.6 2.5 VCNTL V DDR II 1.8 Junction Temperature TJ 125 oC Note 2: Keep VCNTL ≥VIN in operation power on and power off sequences. Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V.

2A DDR TERMINATION REGULATOR AP2302L Preliminary Datasheet Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Parameter Symbol Conditions Min Typ Max Unit Output Offset Voltage VOS ΙL=0Α (Note 4) -20 mV Load Regulation DDR I ∆VOUT IL=0 to 2A -20 mV IL=0 to -2A DDR II IL=0 to 2A -20 IL=0 to -2A Quiescent Current of VCNTL IQ No Load mA Leakage Current in Shutdown Mode ISHDN VREFEN<0.2V, RL=180Ω µA Protection Current Limit ILIMIT 2.6 A Thermal Shutdown Temperature TSHDN 3.3V ≤VCNTL ≤5V 150 oC Thermal Shutdown Hysteresis oC Shutdown Function Shutdown Threshold Trigger Output=High 0.8 V Output=Low 0.2

Electrical Characteristics

(TA=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), unless otherwise specified.) Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN.

Figure 14. Typical Application of AP2302L

2A DDR TERMINATION REGULATOR AP2302L Preliminary Datasheet Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Mechanical Dimensions SOIC-8 Unit: mm(inch) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 4.800(0.189) 5.000(0.197) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) φ

2A DDR TERMINATION REGULATOR AP2302L Preliminary Datasheet Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) 9.500(0.374) 9.900(0.390) 5.200(0.205) 5.400(0.213) 6.350(0.250) 6.650(0.262) 0.400(0.016) 0.600(0.024) 1.270(0.050) TYP 2.540(0.100) TYP 2.200(0.087) 2.400(0.094) 0.430(0.017) 0.580(0.023) 5.400(0.213) 5.700(0.224) 0.000(0.000) 0.127(0.005) 0.430(0.017) 0.580(0.023) 2.550(0.100) 2.900(0.114) 3.800(0.150) REF 1.400(0.055) 1.780(0.070) TO-252-5 Unit: mm(inch)

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com