AP2302 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Support Both DDR I (1.25V TT) and DDR II (0.9VTT) Requirements
  • Source and Sink Current up to 3A
  • High Accuracy Output V oltage at Full-load
  • Adjustable VOUT by External Resistors
  • Shutdown for Standby or Suspend Mode Operation with High-impedance Output

Applications

  • DDR-SDRAM Termination
  • DDR-II Termination
  • SSTL-2 Termination SOIC-8 TO-252-5L TO-263-5L

7 VCNTL

6 VCNTL

5 VCNTL

Figure 2. Pin Configuration of AP2302 (Top View)

3A DDR TERMINATION REGULATOR AP2302 Preliminary Datasheet Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Functional Block Diagram Figure 3. Functional Block Diagram of AP2302

Ordering Information

E1: Lead Free Blank: Tin Lead AP2302 - TR: Tape and Reel Blank: Tube BANDGAP START UP CURRENT LIMIT THERMAL PROTECT OUTPUT CONTROLREFEN VINVCNTL GND VOUT 3 (5, 6, 7, 8) 4 (3) 5 (4) M: SOIC-8 D: TO-252-5L S5: TO-263-5L A(B) A for 5-pin B for 8-pin BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

3A DDR TERMINATION REGULATOR AP2302 Preliminary Datasheet Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Absolute Maximum Ratings (Note 1) Recommended Operating Conditions Note 1: Stresses greater than those li sted under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of th e device at these or any othe r conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Parameter Symbol Value Unit Supply V oltage for Internal Circuit VCNTL 7V Power Dissipation PD Internally Limited W ESD (Human Body Model) ESD 2 KV Junction Temperature TJ 150 oC Storage Temperature Range TSTG -65 to 150 oC Lead Temperature (Soldering, 10sec) TLEAD 260 oC Package Thermal Resistance (Free Air) θJA SOIC-8 160 oC/WTO-252-5L 130 TO-263-5L 90 Parameter Symbol Min Typ Max Unit Supply V oltage for Internal Circuit VCNTL (Note 2, 3)\` 3 . 36V Power Input DDR I VIN 1.6 2.5 VCNTL V DDR II 1.8 Junction Temperature TJ 0 125 oC Note 2: Keep VCNTL œ VIN in power on and power off sequences. Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V .

3A DDR TERMINATION REGULATOR AP2302 Preliminary Datasheet Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Conditions Min Typ Max Unit Output Offset V oltage V OS IL=0A (Note 4) -20 0 20 mV Load Regulation DDR I ∆VOUT/ VOUT IL=0 to 1.5A 0.8 2 %IL=0 to -1.5A 0.8 2 DDR II IL=0 to 1.5A 1.2 3 IL=0 to -1.5A 1.2 3 Quiescent Current of VCNTL IQ No Load 3 5 mA Leakage Current in Shutdown Mode I SHDN VREFEN<0.2V , RL=180Ω 36 µA Protection Current Limit I LIMIT 3A Thermal Shutdown Temperature T SHDN 3.3V≤VCNTL≤5V 150 oC Thermal Shutdown Hysteresis 50 oC Shutdown Function Shutdown Threshold Trigger Output=High 0.8 VOutput=Low 0.2

Electrical Characteristics

(TJ=25oC, VIN=2.5V , VCNTL=3.3V , VREFEN=1.25V , COUT=10µF (Ceramic), unless otherwise specified.) Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN.

Figure 15. Typical Application of AP2302

3A DDR TERMINATION REGULATOR AP2302 Preliminary Datasheet Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions SOIC-8 Unit: mm(inch) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 4.800(0.189) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) ȹ

3A DDR TERMINATION REGULATOR AP2302 Preliminary Datasheet Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) TO-252-5L Unit: mm(inch) 2.180(0.086) 2.400(0.094) 0.000(0.000) 0.250(0.010) 0.900(0.035) 1.250(0.049) 0.450(0.018) 0.600(0.023) 0.430(0.017) 0.600(0.023) 6.350(0.250) 6.700(0.264) 4.300(0.169) 5.500(0.217) 5.970(0.235) 6.220(0.245) 2.540(0.100)BSC 5.080(0.200) BSC 9.500(0.374) 10.400(0.410) 2.550(0.100) 3.200(0.126) 1.400(0.055) 1.780(0.070) 4.800(0.189) MIN 4.300(0.169) 5.400(0.213)

3A DDR TERMINATION REGULATOR AP2302 Preliminary Datasheet Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) TO-263-5L Unit: mm(inch) 9.880 (0.389) 1.760 (0.069) 8.200 (0.323) 8.600 (0.339) 5.080 (0.200) 5.480 (0.216) 0.710 (0.028) 0.910 (0.036) 1.700 (0.067) TYP 6.700 (0.264) 6.900 (0.272) 15.140 (0.596) 15.540 (0.612) 1.170 (0.046) 1.370 (0.054) 4.470 (0.176) 4.670 (0.184) 0.020(0.001) 0.250(0.010) 2.340 (0.092) 2.740 (0.108) 0.310 (0.012) 0.530 (0.021) 5.600 (0.220) REF

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com