AP2301N A-POWER | Alldatasheet

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P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -20V ▼ Small Package Outline RDS(ON) 130mΩ ▼ Surface Mount Device ID - 2.6A

Description

V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG TJ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient3 Max. ℃/W Data and specifications subject to change without notice 200407043 AP2301N Rating - 20 ± 12 -2.6 0.01 1.38 -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 -2.1 Pulsed Drain Current1,2 -10 Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range -55 to 150 Linear Derating Factor Thermal Data The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S D G S SOT-23

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA -0.1 V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-5V, ID=-2.8A 130 mΩ VGS=-2.8V, ID=-2.0A 190 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 V gfs Forward Transconductance VDS=-5V, ID=-2.8A 4.4 S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V uA Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V -10 uA IGSS Gate-Source Leakage VGS=±12V nA Qg Total Gate Charge2 ID=-2.8A 5.2 nC Qgs Gate-Source Charge VDS=-6V 1.36 nC Qgd Gate-Drain ("Miller") Charge VGS=-5V 0.6 nC td(on) Turn-on Delay Time2 VDS=-15V 5.2 ns tr Rise Time ID=-1A 9.7 ns td(off) Turn-off Delay Time RG=6Ω,VGS=-10V ns tf Fall Time RD=15Ω ns Ciss Input Capacitance VGS=0V 295 pF Coss Output Capacitance VDS=-6V 170 pF Crss Reverse Transfer Capacitance f=1.0MHz pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V A ISM Pulsed Source Current ( Body Diode )1 -10 A VSD Forward On Voltage2 Tj=25℃, IS=-1.6A, VGS=0V -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP2301N -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C VGS= -5V VGS= -4V VGS= -3V VGS= -2V -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C VGS= -5V VGS= -4V VGS= -3V VGS= -2V 200 400 600 800 -V GS , Gate-to-Source Voltage (V) RDS(ON) (Ω Ω Ω I D = -2A T A =25 ℃ 0.6 0.8 1.2 1.4 1.6 1.8 -50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -2.8A V GS = -5V 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o C T j =150 o C 0.0 0.5 1.0 1.5 -50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃ ℃/W t T Single Pulse Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-2.8A V DS =-6V 100 1000 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off)tf VDS VGS 10% 90% Q VG QGS QGD QG Charge -5V 0.01 0.1 100 0.1 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 1ms 10ms 100ms DC T A =25 °C Single Pulse