AP2301GN A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS -20V ▼ ▼ ▼ ▼ Small Package Outline RDS(ON) 130mΩ ▼ ▼ ▼ ▼ Surface Mount Device ID - 2.6A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 90 ℃/W Data and specifications subject to change without notice Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current -55 to 150 Linear Derating Factor 1.38 -55 to 150 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Continuous Drain Current3 -2.1 Pulsed Drain Current1,2 -10 200407043 AP2301GN Rating - 20 ± 12 -2.6 0.01 Pb Free Plating Product The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S D G S SOT-23

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-5V, ID=-2.8A - - 130 mΩ VGS=-2.8V, ID=-2.0A - - 190 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.5 - - V gfs Forward Transconductance V DS=-5V, ID=-2.8A - 4.4 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=±12V - - nA Qg Total Gate Charge2 ID=-2.8A - 5.2 10 nC Qgs Gate-Source Charge V DS=-6V - 1.36 - nC Qgd Gate-Drain ("Miller") Charge V GS=-5V - 0.6 - nC td(on) Turn-on Delay Time2 VDS=-15V - 5.2 - ns tr Rise Time I D=-1A - 9.7 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=-10V - 19 - ns tf Fall Time R D=15Ω -2 9- ns Ciss Input Capacitance V GS=0V - 295 - pF Coss Output Capacitance V DS=-6V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1 A ISM Pulsed Source Current ( Body Diode )1 - - -10 A VSD Forward On Voltage2 Tj=25℃, IS=-1.6A, VGS=0V - - -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance Fig 5. Forward Characteristic o f Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP2301GN 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C VGS= -5V VGS= -4V VGS= -3V VGS= -2V 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C VGS= -5V VGS= -4V VGS= -3V VGS= -2V 200 400 600 800 02468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (ΩΩΩΩ) I D = -2A T A =25 ℃℃℃℃ 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -2.8A V GS = -5V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.0 0.5 1.0 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) 0.01 0.05 0.1 0.2 Duty factor=0.5 PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃℃℃℃/W t T Single Pulse 0246 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-2.8A V DS =-6V 100 1000 13579 1 1 1 3 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off)tf VDS VGS 10% 90% Q VG QGS QGD QG Charge -5V 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 1ms 10ms 100ms DC T A =25 °C Single Pulse