AP2301EN-HF_14 A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Capable of 2.5V Gate Drive BVDSS -20V ▼ Small Package Outline RDS(ON) 130mΩ ▼ Surface Mount Device ID -2.3A ▼ RoHS Compliant & Halogen-Free

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 125 ℃/W Data and specifications subject to change without notice -55 to 150 -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Continuous Drain Current3, VGS @ 4.5V -1.8 Pulsed Drain Current1 -10 201112141 AP2301EN-HF Rating - 20 +12 -2.3 Halogen-Free Product Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S D G S SOT-23S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-2A - - 130 m Ω VGS=-2.5V, ID=-1A - - 190 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.3 -0.7 -1.2 V gfs Forward Transconductance V DS=-5V, ID=-2A - 7 - S IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS= +12V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=-2A - 6 9.6 nC Qgs Gate-Source Charge V DS=-10V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 1.7 - nC td(on) Turn-on Delay Time V DS=-10V - 7 - ns tr Rise Time I D=-1A - 16 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 1- ns tf Fall Time V GS=-5V - 5 - ns Ciss Input Capacitance V GS=0V - 520 830 pF Coss Output Capacitance V DS=-10V - 70 pF Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-0.83A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-2A, VGS=0V, - 14 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 6 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t < 5s ; 350℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

65mΩ Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.01E+08 Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -2A V GS = -4.5V 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -5.0V -4.5V -3.5V -2.5V V G = -2.0V 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -5.0V -4.5V -3.5V -2.5V V G = -2.0V T A = 150o C -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) I D = -250uA 110 130 150 123456 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -1A T A =25 o C

65mΩ Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fi g 10. Effective Transient Thermal Impedance Fig 11. Maximum Continuous Drain Fig 12. Gate Charge Waveform Current v.s. Ambient Temperature 02468 1 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -2A V DS = -10V 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja = 350℃/W 200 400 600 800 1 5 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.02 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) Operation in this area limited by RDS(ON) Q VG -4.5V QGS QGD QG Charge