AP2210 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Up to 300mA Output Current
  • Excellent ESR Stability
  • Low Standby Current
  • Low Dropout V oltage: VDROP=250mV at 300mA
  • High Output Accuracy: ±1%
  • Good Ripple Rejection Ability: 75dB at 100Hz and IOUT=100µA
  • Tight Load and Line Regulation
  • Low Temperature Coefficient
  • Over Current Protection
  • Thermal Protection
  • Reverse-battery Protection
  • Logic-controlled Enable

Applications

  • Cellular Phones
  • Cordless Phones
  • Wireless Communicators
  • PDAs/Palmtops
  • PC Mother Board
  • Consumer Electronics SOT-23-5

Figure 1. Package Types of AP2210

Figure 2. Pin Configuration of AP2210 (Top View)

25 V OUT Regulated output voltage

31 V IN Input voltage

4 BYP Bypass capacitor for low noise operation

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Figure 3. Functional Block Diagram of AP2210

Ordering Information

Part Number Marking ID Packing TypeTin Lead Lead Free Tin Lead Lead Free SOT-23-3 -40 to 125oC AP2210N-2.5TRE1 EH2 Tape & Reel AP2210N-2.8TRE1 EH3 Tape & Reel AP2210N-3.0TRE1 EH4 Tape & Reel AP2210N-3.3TRE1 EH5 Tape & Reel SOT-23-5 -40 to 125oC AP2210K-2.5TR AP2210K-2.5TRE1 K5C E5C Tape & Reel AP2210K-2.8TRE1 E5F Tape & Reel AP2210K-3.0TR AP2210K-3.0TRE1 K5H E5H Tape & Reel AP2210K-3.3TR AP2210K-3.3TRE1 K5K E5K Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V 2.8: Fixed Output 2.8VK: SOT-23-5 N: SOT-23-3 A (B) A for SOT-23-3 B for SOT-23-5 1 (2) 2 (5)3 (1) (3)

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Value Unit Supply Input V oltage V IN 15 V Enable Input V oltage V EN 15 V Power Dissipation P D Internally Limited (Thermal Protection) W Lead Temperature (Soldering, 10sec) TLEAD 260 oC Junction Temperature TJ 150 oC Storage Temperature TSTG -65 to 150 oC ESD (Machine Model) ESD 300 V Thermal Resistance (No Heatsink) θJA SOT-23-3 200 oC/W SOT-23-5 200 Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may ca use permanent damage to the device. These are stress ratings only, and functi onal operation of the device at these or any other conditions be yond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Parameter Symbol Min Max Unit Supply Input V oltage V IN 2.5 13.2 V Enable Input V oltage V EN 0 13.2 V Operating Junction Temperature T J -40 125 oC Recommended Operating Conditions Absolute Maximum Ratings (Note 1)

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Conditions Min Typ Max Unit Output V oltage Accuracy ∆VOUT/VOUT Variation from specified VOUT -1 1 % -2 2 Output V oltage Temperature Coefficient (Note 3) ∆VOUT/∆5 120 µV/oC (∆VOUT/VOUT)/∆T 48 ppm/oC Line Regulation VRLINE VIN=3.5V to 13.2V 1.5 4.5 mV12 Load Regulation (Note 4) VRLOAD IOUT=0.1mA to 300mA 16 mV30 Dropout V oltage (Note 5) VDROP IOUT=100µA 15 50 mV IOUT=50mA 110 150 230 IOUT=100mA 140 250 300 IOUT=150mA 165 275 350 IOUT=300mA 250 400 500 Standby Current ISTD VEN≤0.4V (shutdown) 0.01 1 µA VEN≤0.18V (shutdown) 5 Ground Pin Current (Note 6) IGND VEN≥2.0V , IOUT=100µA 100 150 µA180 VEN≥2.0V , IOUT=50mA 350 600 800 VEN≥2.0V , IOUT=150mA 1.3 1.9 mA2.5 VEN≥2.0V , IOUT=300mA 41 0 Ripple Rejection PSRR f=100Hz, I OUT=100µA7 5 d B Current Limit I LIMIT VOUT=0V 450 900 mA Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 HznV / VIN=3.5V , IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V , TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified.

Electrical Characteristics

AP2210-2.5 Electrical Characteristics

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Conditions Min Typ Max Unit Enable Input Logic-low V oltage VIL Regulator shutdown 0.4 V 0.18 Enable Input Logic-high V oltage V IH Regulator enabled 2.0 V Enable Input Logic-low Current IIL VIL≤0.4V 0.01 1 µA VIL≤0.18V 2 Enable Input Logic-high Current IIH VIL≥2.0V 5 20 µA VIL≥2.0V 25 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (- 40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Electrical Characteristics (Continued) VIN=3.5V , IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V , TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. AP2210-2.5 Electrical Characteristics

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Conditions Min Typ Max Unit Output V oltage Accuracy ∆VOUT/VOUT Variation from specified VOUT -1 1 % -2 2 Output V oltage Temperature Coefficient (Note 3) ∆VOUT/∆5 120 µV/oC (∆VOUT/VOUT)/∆T 42.8 ppm/oC Line Regulation VRLINE VIN=3.8V to 13.2V 1.5 4.5 mV12 Load Regulation (Note 4) VRLOAD IOUT=0.1mA to 300mA 16 mV30 Dropout V oltage (Note 5) VDROP IOUT=100µA 15 50 mV IOUT=50mA 110 150 230 IOUT=100mA 140 250 300 IOUT=150mA 165 275 350 IOUT=300mA 250 400 500 Standby Current ISTD VEN≤0.4V (shutdown) 0.01 1 µA VEN≤0.18V (shutdown) 5 Ground Pin Current (Note 6) IGND VEN≥2.0V , IOUT=100µA 100 150 µA180 VEN≥2.0V , IOUT=50mA 350 600 800 VEN≥2.0V , IOUT=150mA 1.3 1.9 mA2.5 VEN≥2.0V , IOUT=300mA 41 0 Ripple Rejection PSRR f=100Hz, I OUT=100µA7 5 d B Current Limit I LIMIT VOUT=0V 450 900 mA Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 HznV / VIN=3.8V , IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V , TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. AP2210-2.8 Electrical Characteristics Electrical Characteristics (Continued)

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Conditions Min Typ Max Unit Enable Input Logic-low V oltage VIL Regulator shutdown 0.4 V 0.18 Enable Input Logic-high V oltage V IH Regulator enabled 2.0 V Enable Input Logic-low Current IIL VIL≤0.4V 0.01 1 µA VIL≤0.18V 2 Enable Input Logic-high Current IIH VIL≥2.0V 5 20 µA VIL≥2.0V 25 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (- 40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. VIN=3.8V , IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V , TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. AP2210-2.8 Electrical Characteristics Electrical Characteristics (Continued)

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited VIN=4V , IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V , TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. AP2210-3.0 Electrical Characteristics Electrical Characteristics (Continued) Parameter Symbol Conditions Min Typ Max Unit Output V oltage Accuracy ∆VOUT/VOUT Variation from specified VOUT -1 1 % -2 2 Output V oltage Temperature Coefficient (Note 3) OUT/∆5 120 µV/oC (∆VOUT/VOUT)/∆T 40 ppm/oC Line Regulation VRLINE VIN=4V to 13.2V 1.5 4.5 mV12 Load Regulation (Note 4) VRLOAD IOUT=0.1mA to 300mA 16 mV30 Dropout V oltage (Note 5) VDROP IOUT=100µA 15 50 mV IOUT=50mA 110 150 230 IOUT=100mA 140 250 300 IOUT=150mA 165 275 350 IOUT=300mA 250 400 500 Standby Current ISTD VEN≤0.4V (shutdown) 0.01 1 µA VEN≤0.18V (shutdown) 5 Ground Pin Current (Note 6) IGND VEN≥2.0V , IOUT=100µA 100 150 µA180 VEN≥2.0V , IOUT=50mA 350 600 800 VEN≥2.0V , IOUT=150mA 1.3 1.9 mA2.5 VEN≥2.0V , IOUT=300mA 41 0 Ripple Rejection PSRR f=100Hz, I OUT=100µA7 5 d B Current Limit I LIMIT VOUT=0V 450 900 mA Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 HznV /

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (- 40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Electrical Characteristics (Continued) VIN=4V , IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V , TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. AP2210-3.0 Electrical Characteristics Parameter Symbol Conditions Min Typ Max Unit Enable Input Logic-low V oltage VIL Regulator shutdown 0.4 V 0.18 Enable Input Logic-high V oltage V IH Regulator enabled 2.0 V Enable Input Logic-low Current IIL VIL≤0.4V 0.01 1 µA VIL≤0.18V 2 Enable Input Logic-high Current IIH VIL≥2.0V 5 20 µA VIL≥2.0V 25

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Conditions Min Typ Max Unit Output V oltage Accuracy ∆VOUT/VOUT Variation from specified VOUT -1 1 % -2 2 Output V oltage Temperature Coefficient (Note 3) ∆VOUT/∆5 120 µV/oC (∆VOUT/VOUT)/∆T 36.3 ppm/oC Line Regulation VRLINE VIN=4.3V to 13.2V 1.5 4.5 mV12 Load Regulation (Note 4) VRLOAD IOUT=0.1mA to 300mA 16 mV30 Dropout V oltage (Note 5) VDROP IOUT=100µA 15 50 mV IOUT=50mA 110 150 230 IOUT=100mA 140 250 300 IOUT=150mA 165 275 350 IOUT=300mA 250 400 500 Standby Current ISTD VEN≤0.4V (shutdown) 0.01 1 µA VEN≤0.18V (shutdown) 5 Ground Pin Current (Note 6) IGND VEN≥2.0V , IOUT=100µA 100 150 µA180 VEN≥2.0V , IOUT=50mA 350 600 800 VEN≥2.0V , IOUT=150mA 1.3 1.9 mA2.5 VEN≥2.0V , IOUT=300mA 41 0 Ripple Rejection PSRR f=100Hz, I OUT=100µA7 5 d B Current Limit I LIMIT VOUT=0V 450 900 mA Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 HznV / Electrical Characteristics (Continued) VIN=4.3V , IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V , TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. AP2210-3.3 Electrical Characteristics

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Conditions Min Typ Max Unit Enable Input Logic-low V oltage VIL Regulator shutdown 0.4 V 0.18 Enable Input Logic-high V oltage V IH Regulator enabled 2.0 V Enable Input Logic-low Current IIL VIL≤0.4V 0.01 1 µA VIL≤0.18V 2 Enable Input Logic-high Current IIH VIL≥2.0V 5 20 µA VIL≥2.0V 25 Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (- 40oC≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Electrical Characteristics (Continued) VIN=4.3V , IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V , TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. AP2210-3.3 Electrical Characteristics

Figure 20. ESR vs. Output Current

Figure 21. Typical Application of AP2210 (Note 7)

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Input Capacitor A 1 µF minimum capacitor is recommended to be placed between VIN and GND. Output Capacitor It is required to prevent oscillation. 1.0 µF minimum is recommended when C BYP is unused. 2.2 µF mini- mum is recommended when CBYP is 100pF. The out- put capacitor may be increas ed to improve transient response. Noise Bypass Capacitor Bypass capacitor is connected to the internal voltage reference. A 100pF capacitor connected from BYP to GND make this reference quiet, resulting in a significant reduction in output noise, but the ESR stable area will be narrowed. The start-up speed of the AP2210 is inversely proportional to the value of reference bypass capacitor. In some cases, if output noise is not a major concern and rapid turn-on is necessary, omit C BYP and leave BYP open. Power Dissipation Thermal shutdown may take place if exceeding the maximum power dissipation in application. Under all possible operating conditions, the junction tempera- ture must be within the range specified under abso- lute maximum ratings to avoid thermal shutdown. To determine if the power dissipated in the regulator reaches the maximum power dissipation (see figure 16, 17), using: T J = PD*θJA + TA PD=(VIN-VOUT)*IOUT+VIN*IGND Where: TJ≤TJ(max), TJ(max) is absolute maximum rat- ings for the junction temperature; V IN*IGND can be ignored due to its small value. TJ(max) is 150 oC, θJA is 200 oC/W, no heatsink is required since the package alone will dissipate enough heat to satisfy these requirements unless the calculated value for power dissipation exceeds the limit. Example (3.0V version): I OUT=300mA, TA=50oC, VIN(Max) is: (150oC-50oC)/(0.3A*200oC/W)+3.0V=4.67V Therefore, for good performance, please make sure that input voltage is less than 4.67V without heatsink when TA=50oC.

Application Information

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions SOT-23-3 Unit: mm(inch)

300mA RF ULDO REGULATOR AP2210 Data Sheet Mar. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) SOT-23-5 Unit: mm(inch) 2.820(0.111) 2.650(0.104) 1.500(0.059) 0.000(0.000) 1.050(0.041) 0.300(0.012) 0.950(0.037) 1.050(0.041) 0.100(0.004) 0.200(0.008) 0.300(0.012) 3.020(0.119) 1.700(0.067) 2.950(0.116) 0.400(0.016) 1.250(0.049) 0.100(0.004) 1.150(0.045) 0.200(0.008) 0.600(0.024) 1.800(0.071) 2.000(0.079) 0.700(0.028) REF TYP

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com