AP2114_13 BCDSEMI | Alldatasheet

Document overview

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  • PDF pages: 33

Technical content

Features

  • Output V oltage Accuracy: ±1.5%
  • Output Current: 1A (Min)
  • Fold-back Short Current Protection: 50mA
  • Low Dropout V oltage (3.3V): 450mV (Typ) @IOUT=1A
  • Stable with 4.7 μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic
  • Excellent Line Regulation: 0.02%/V (Typ), 0.1%/V (Max) @ IOUT=30mA
  • Excellent Load Regulation: 0.2%A (Typ) @ IOUT=1mA to 1A
  • Low Quiescent Current: 60 μA (1.2V/1.5V/1.8V / 2 . 5 V / A D J )
  • Low Output Noise: 30 μVRMS
  • PSRR: 68dB @ Freq=1KHz (1.2V/1.5V/1.8V / A D J )
  • OTSD Protection
  • Operating Temperature Range: -40°C to 85°C
  • ESD: MM 400V , HBM 4000V

Applications

  • LCD Monitor
  • LCD TV
  • STB

Figure 1. Package Types of AP2114

Figure 2. Pin Configuration of AP2114 (Top View)

3 VIN

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Pin Descriptions Pin Number Pin Name Function SOT-223 (H), TO-263-3, TO-252-2 (1) (D) TO-252-2 (3) (D) TO-252-2 (4) (D) SOT-223 (HA), TO-252-2 (1) (DA) TO-252-2 (3) (DA) TO-252-2 (4) (DA) SOIC-8, PSOP-8 (Fixed) SOIC-8, PSOP-8 (ADJ) 1 2 1, 3, 5, 6, 7 2, 3, 5, 7 GND Ground 2 3 2 8 VOUT Regulated Output 3 1 4 1 VIN Input V oltage Pin 8 4 EN Chip Enable, H–Normal Work, L– Shutdown Output

6 ADJ Adjust Output

3MΩ VOUT A (B) B: SOIC -8, PSOP -8 (8) 1 (1, 3, 5, 6, 7 ) 2 (2) 3 (4) {2} {3} {1} {C} (H) C: SOT -223 , (HA) TO-252- 2 (1)/(3 (DA) 4)(D))/( )/(4)

Figure 3. Functional Block Diagram of AP2114

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited

Ordering Information

Circuit Type G1: Green Package Temperature Range Output Voltage Part Number Marking ID Packing Type SOT-223 -40 to 85°C 1.2V (H) AP2114H-1.2TRG1 GH12C Tape & Reel 1.5V (H) AP2114H-1.5TRG1 GH16G Tape & Reel 1.8V (H) AP2114H-1.8TRG1 GH12D Tape & Reel 2.5V (H) AP2114H-2.5TRG1 GH14C Tape & Reel 3.3V (H) AP2114H-3.3TRG1 GH12E Tape & Reel SOT-223 -40 to 85°C 1.2V (HA) AP2114HA-1.2TRG1 GH13B Tape & Reel 1.5V (HA) AP2114HA-1.5TRG 1 GH16H Tape & Reel 1.8V (HA) AP2114HA-1.8TRG1 GH14D Tape & Reel 2.5V (HA) AP2114HA-2.5TRG 1 GH14E Tape & Reel 3.3V (HA) AP2114HA-3.3TRG1 GH14F Tape & Reel TO-252-2 (1)/ TO-252-2 (3)/ TO-252-2 (4) -40 to 85°C 1.2V (D) AP2114D-1.2TRG1 AP2114D-1.2G1 Tape & Reel 1.5V (D) AP2114D-1.5TRG1 AP2114D-1.5G1 Tape & Reel 1.8V (D) AP2114D-1.8TRG1 AP2114D-1.8G1 Tape & Reel 2.5V (D) AP2114D-2.5TRG1 AP2114D-2.5G1 Tape & Reel 3.3V (D) AP2114D-3.3TRG1 AP2114D-3.3G1 Tape & Reel TO-252-2 (1)/ TO-252-2 (3)/ TO-252-2 (4) -40 to 85°C 1.2V (DA) AP2114DA-1.2TRG1 AP2114DA-1.2G1 Tape & Reel 1.5V (DA) AP2114DA-1.5TRG1 AP2114DA-1.5G1 Tape & Reel 1.8V (DA) AP2114DA-1.8TRG1 AP2114DA-1.8G1 Tape & Reel 2.5V (DA) AP2114DA-2.5TRG1 AP2114DA-2.5G1 Tape & Reel 3.3V (DA) AP2114DA-3.3TRG1 AP2114DA-3.3G1 Tape & Reel TO-263-3 -40 to 85°C 1.2V AP2114S-1.2TRG1 AP2114S-1.2G1 Tape & Reel 1.5V AP2114S-1.5TRG1 AP2114S-1.5G1 Tape & Reel 1.8V AP2114S-1.8TRG1 AP2114S-1.8G1 Tape & Reel 2.5V AP2114S-2.5TRG1 AP2114S-2.5G1 Tape & Reel 3.3V AP2114S-3.3TRG1 AP2114S-3.3G1 Tape & Reel SOIC-8 -40 to 85°C 1.2V AP2114M-1.2TRG1 2114M-1.2G1 Tape & Reel 1.5V AP2114M-1.5TRG1 2114M-1.5G1 Tape & Reel 1.8V AP2114M-1.8TRG1 2114M-1.8G1 Tape & Reel 2.5V AP2114M-2.5TRG1 2114M-2.5G1 Tape & Reel 3.3V AP2114M-3.3TRG1 2114M-3.3G1 Tape & Reel ADJ AP2114M-ADJG1 2114M-ADJG1 Tube AP2114M-ADJTRG1 2114M-ADJ G1 Tape & Reel Blank: Tube TR: Tape & Reel 1.2: Fixed Output 1.2V 1.5: Fixed Output 1.5V 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 3.3: Fixed Output 3.3V ADJ: ADJ Output Package H/HA: SOT-223 S: TO-263-3 M: SOIC-8 MP: PSOP-8

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Ordering Information (Continued) Package Temperature Range Output Voltage Part Number Marking ID Packing Type PSOP-8 -40 to 85°C 1.2V AP2114MP-1.2TRG1 2114M P-1.2G1 Tape & Reel 1.5V AP2114MP-1.5TRG1 2114M P-1.5G1 Tape & Reel 1.8V AP2114MP-1.8TRG1 2114M P-1.8G1 Tape & Reel 2.5V AP2114MP-2.5TRG1 2114M P-2.5G1 Tape & Reel 3.3V AP2114MP-3.3TRG1 2114M P-3.3G1 Tape & Reel ADJ AP2114MP-ADJG1 2114M P-ADJG1 Tube AP2114MP-ADJTRG1 2114MP-AD JG1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage V IN 6.5 V Operating Junction Temperature Range TJ 150 ºC Storage Temperature Range T STG -65 to 150 ºC Lead Temperature (Soldering, 10sec) T LEAD 260 ºC Thermal Resistance （Junction to Ambient）(No Heatsink) θJA SOIC-8 144 °C/W PSOP-8 143 SOT-223 128 TO-252-2 (1)/ TO-252-2 (3)/ TO-252-2 (4) TO-263-3 73 ESD (Machine Model) 400 V ESD (Human Body Model) 4000 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under “Recommended Operating Co nditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage V IN 2.5 6.0 V Operating Ambient Temperature Range TA -40 85 °C

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited

Electrical Characteristics

AP2114-1.2 Electrical Characteristics (Note 2) (VIN=2.5V , CIN=4.7μF (Ceramic), C OUT=4.7μF (Ceramic), Typical T A= 25°C, Bold typeface applies over -40 OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Co nditions Min Typ Max Unit Output V oltage V OUT V IN =2.5V , 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 1.2 VOUT ×101.5% V Input V oltage V IN 6.0 V Maximum Output Current I OUT(MAX) V IN=2.5V , VOUT=1.182V to 1.218V 1 A Load Regulation △VOUT/VOUT I△ OUT VIN=2.5V , 1mA ≤ IOUT ≤1A 0.2 1 %/A Line Regulation △VOUT/VOUT V△ IN 2.5V≤VIN≤6V , IOUT=30mA -0.1 0.02 0.1 %/V Dropout V oltage V DROP I OUT=1.0A 1200 1300 mV Quiescent Current I Q V IN=2.5V , IOUT=0mA 60 75 μA Power Supply Rejectio n Ratio PSRR Ripple 1Vp-p VIN=2.5V , IOUT=100mA f=100Hz 68 dB f=1KHz 68 Output V oltage Temperature Coefficient △VOUT/VOUT T△ IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE 10Hz ≤ f ≤100kHz (No Load) 30 μVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 V VEN Low V oltage V IL Enable logic low, regulator off 0.4 Standby Current I STD V IN=2.5V , VEN in OFF mode 0.01 1.0 μA Start-up Time t S No Load 20 μs EN Pull Down Resistor RPD 3.0 MΩ VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 25 Thermal Resistance (Junction to Case) θJC SOIC-8 74.6 °C/W PSOP-8 43.7 SOT-223 50.9 TO-263-3 22 Note 2: To prevent the Short Circuit Current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2114-1.5 Electrical Characteristics (Note 2) (VIN=2.5V , CIN=4.7μF (Ceramic), C OUT=4.7μF (Ceramic), Typical T A= 25°C, Bold typeface applies over -40 OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Co nditions Min Typ Max Unit Output V oltage V OUT V IN =2.5V , 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 1.5 VOUT ×101.5% V Input V oltage V IN 6.0 V Maximum Output Current I OUT(MAX) V IN=2.5V , VOUT=1.478V to 1.523V 1 A Load Regulation △VOUT/VOUT I△ OUT VIN=2.5V , 1mA ≤ IOUT ≤1A 0.2 1 %/A Line Regulation △VOUT/VOUT V△ IN 2.5V≤VIN≤6V , IOUT=30mA -0.1 0.02 0.1 %/V Dropout V oltage V DROP I OUT=1.0A 800 1000 mV Quiescent Current I Q V IN=2.5V , IOUT=0mA 60 75 μA Power Supply Rejectio n Ratio PSRR Ripple 1Vp-p VIN=2.5V , IOUT=100mA f=100Hz 68 dB f=1KHz 68 Output V oltage Temperature Coefficient △VOUT/VOUT T△ IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE 10Hz ≤ f ≤100kHz (No Load) 30 μVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 V VEN Low V oltage V IL Enable logic low, regulator off 0.4 Standby Current I STD V IN=2.5V , VEN in OFF mode 0.01 1.0 μA Start-up Time t S No Load 20 μs EN Pull Down Resistor RPD 3.0 MΩ VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 25 Thermal Resistance (Junction to Case) θJC SOIC-8 74.6 °C/W PSOP-8 43.7 SOT-223 50.9 TO-263-3 22 Note 2: To prevent the Short Circuit Current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2114-1.8 Electrical Characteristics (Note 2) (VIN=2.8V , CIN=4.7μF (Ceramic), C OUT=4.7μF (Ceramic), Typical T A= 25°C, Bold typeface applies over -40 OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Co nditions Min Typ Max Unit Output V oltage V OUT V IN =2.8V , 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 1.8 VOUT ×101.5% V Maximum Output Current I OUT(MAX) V IN=2.8V , VOUT=1.773V to 1.827V 1.0 A Load Regulation △VOUT/VOUT I△ OUT VIN=2.8V , 1mA ≤ IOUT ≤1A 0.2 1.0 %/A Line Regulation △VOUT/VOUT V△ IN 2.8V≤VIN≤6V , IOUT=30mA -0.1 0.02 0.1 %/V Dropout V oltage V DROP I OUT=1.0A 500 700 mV Quiescent Current I Q V IN=2.8V , IOUT=0mA 60 75 μA Power Supply Rejectio n Ratio PSRR Ripple 1Vp-p VIN=2.8V , IOUT=100mA f=100Hz 68 dB f=1KHz 68 Output V oltage Temperature Coefficient △VOUT/VOUT T△ IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE 10Hz ≤ f ≤100kHz (No load) 30 μVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 V VEN Low V oltage V IL Enable logic low, regulator off 0.4 Standby Current I STD V IN=2.8V , VEN in OFF mode 0.01 1.0 μA Start-up Time t S No Load 20 μs EN Pull Down Resistor RPD 3.0 MΩ VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 25 Thermal Resistance (Junction to Case) θJC SOIC-8 74.6 °C /W PSOP-8 43.7 SOT-223 50.9 TO-263-3 22 Note 2: To prevent the Short Circuit Current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2114-2.5 Electrical Characteristics (Note 2) (VIN=3.5V , CIN=4.7μF (Ceramic), C OUT=4.7μF (Ceramic), Typical T A= 25°C, Bold typeface applies over -40 OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Co nditions Min Typ Max Unit Output Voltage V OUT V IN =3.5V, 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 2.5 VOUT ×101.5% V Maximum Output Current I OUT(MAX) V IN=3.5V, VOUT=2.463V to 2.537V 1.0 A Load Regulation △VOUT/VOUT I△ OUT Vout=2.5V, VIN=Vout+1V 1mA ≤ IOUT ≤1A 0.2 1.0 %/A Line Regulation △VOUT/VOUT V△ IN 3.5V≤VIN≤6V, IOUT=30mA -0.1 0.02 0.1 %/V Dropout Voltage V DROP I OUT =1A 450 750 mV Quiescent Current I Q V IN=3.5V, IOUT=0mA 60 80 μA Power Supply Rejectio n Ratio PSRR Ripple 1Vp-p VIN=3.5V, IOUT=100mA f=100Hz 65 dB f=1KHz 65 Output Voltage Temperature Coefficient △VOUT/VOUT T△ IOUT=30mA ±30 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE 10Hz ≤ f ≤100kHz 30 μVRMS VEN High Voltage V IH Enable logic high, regulator on 1.5 V VEN Low Voltage V IL Enable logic low, regulator off 0.4 Standby Current I STD V IN=3.5V, VEN in OFF mode 0.01 1.0 μA Start-up Time t S No Load 20 μs EN Pull Down Resistor R PD 3.0 MΩ VOUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 25 Thermal Resistance (Junction to Case) θJC SOIC-8 74.6 °C /W PSOP-8 43.7 SOT-223 50.9 TO-263-3 22 Note 2: To prevent the Short Circuit Current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2114-3.3 Electrical Characteristics (Note 2) (VIN=4.3V , CIN=4.7μF (Ceramic), C OUT=4.7μF (Ceramic), Typical T A= 25°C, Bold typeface applies over -40 OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Co nditions Min Typ Max Unit Output V oltage V OUT V IN =4.3V , 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 3.3 VOUT ×101.5% V Maximum Output Current I OUT(MAX) V IN =4.3V , VOUT=3.25V to 3.35V 1.0 A Load Regulation △VOUT/VOUT I△ OUT VIN=4.3V , 1mA ≤ IOUT ≤1A 0.2 1.0 %/A Line Regulation △VOUT/VOUT V△ IN 4.3V≤VIN≤6V , IOUT=30mA -0.1 0.02 0.1 %/V Dropout V oltage V DROP I OUT=1A 450 750 mV Quiescent Current I Q V IN=4.3V , IOUT=0mA 65 90 μA Power Supply Rejectio n Ratio PSRR Ripple 1Vp-p VIN=4.3V , IOUT=100mA f=100Hz 65 dB f=1KHz 65 Output V oltage Temperature Coefficient △VOUT/VOUT △T IOUT=30mA ±30 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE 10Hz ≤ f ≤100kHz (No load) 30 μVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 V VEN Low V oltage V IL Enable logic low, regulator off 0.4 Standby Current I STD V IN=4.3V , VEN in OFF mode 0.01 1.0 μA Start-up Time t S No Load 20 μs EN Pull Down Resistor R PD 3.0 MΩ VOUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 25 Thermal Resistance (Junction to Case) θJC SOIC-8 74.6 °C/W PSOP-8 43.7 SOT-223 50.9 TO-263-3 22 Note 2: To prevent the Short Circuit Current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T A=25°C. Over temperature specifications guaranteed by design only.

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) (VIN=2.5V , CIN=4.7μF (Ceramic), C OUT=4.7μF (Ceramic), Typical T A= 25°C, Bold typeface applies over -40 OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Co nditions Min Typ Max Unit Reference V oltage V REF V IN =2.5V , 1mA ≤ IOUT ≤ 30mA VREF ×98.5% 0.8 VREF ×101.5% V Input V oltage V IN 6.0 V Maximum Output Current I OUT(MAX) V IN=2.5V , VOUT= 0.788V to 0.812V 1 A Load Regulation △VOUT/VOUT I△ OUT VIN=2.5V , 1mA ≤ IOUT ≤1A 0.2 1 %/A Line Regulation △VOUT/VOUT V△ IN 2.5V≤VIN≤6V , IOUT=30mA -0.1 0.02 0.1 %/V Quiescent Current I Q V IN=2.5V , IOUT=0mA 60 75 μA Power Supply Rejectio n Ratio PSRR Ripple 1Vp-p VIN=2.5V , IOUT=100mA f=100Hz 68 dB f=1KHz 68 Output V oltage Temperature Coefficient △VOUT/VOUT T△ IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE 10Hz ≤ f ≤100kHz (No Load) 30 μVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 V VEN Low V oltage V IL Enable logic low, regulator off 0.4 Standby Current I STD V IN=2.5V , VEN in OFF mode 0.01 1.0 μA Start-up Time t S No Load 20 μs EN Pull Down Resistor RPD 3.0 MΩ VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 25 Thermal Resistance (Junction to Case) θJC SOIC-8 74.6 °C/WPSOP-8 43.7 Note 2: To prevent the Short Circuit Current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

Figure 47. Typical Application of AP2114

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions SOT-223 Unit: mm(inch) 3.300(0.130) 3.700(0.146) 6.700(0.264) 7.300(0.287) 2.900(0.114) 3.100(0.122) 0.610(0.024) 0.810(0.032) 2.300(0.091) TYP 6.300(0.248) 6.700(0.264) 1.750(0.069) TYP 4.500(0.177) 4.700(0.185) 0.020(0.001) 0.100(0.004) 1.520(0.060) 1.800(0.071) 1.500(0.059) 1.700(0.067) 0.250(0.010) 0.350(0.014) 0.250(0.010) 10° 0.900(0.035) MIN

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) TO-252-2 (1) Unit: mm(inch) 1.350(0.053) 1.650(0.065) 0.600(0.024) 0.900(0.035) 3.800REF(0.150REF) 4.800(0.189) 6.500(0.256) 1.400(0.055) 1.780(0.070) 9.500(0.374) 9.900(0.390) 2.550(0.100) 2.900(0.114) 5.450(0.215) 6.250(0.246)

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) TO-252-2 (3) Unit: mm(inch) 1.29±0.1 2.900REF 1.400(0.055) 1.700(0.067) 0.470(0.019) 0.600(0.024) 9.800(0.386) 10.400(0.409) 2.200(0.087) 2.380(0.094) 0.900(0.035) 1.100(0.043) 4.700REF 6.500(0.256) 6.700(0.264) 5.130(0.202) 5.460(0.215) 0.150(0.006) 0.750(0.030) 6.000(0.236) 6.200(0.244) 0.720(0.028) 0.850(0.033) 2.286(0.090) BSC 0.720(0.028) 0.900(0.035) 0.900(0.035) 1.250(0.049) 1.800REF 0.600(0.024) 1.000(0.039) 5.250REF Option 1 Option 2

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) TO-252-2 (4) U n i t : m m ( i n c h )

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) TO-263-3 Unit: mm(inch) 8.640(0.340) 9.650(0.380) 0.990(0.039) 0.510(0.020) 2.540(0.100) 1.150(0.045) 9.650(0.380) 14.760(0.581) 8.840(0.348) 2.640(0.104) 0.020(0.001) 0.380(0.015) 2.200(0.087) 70° 10.290(0.405) 4.070(0.160) 4.820(0.190) 1.390(0.055) 1.150(0.045) 1.390(0.055) 2.540(0.100) 1.270(0.050) 1.390(0.055) 0.250(0.010) 2.700(0.106) 0.400(0.016) 5.600(0.220) 7.420(0.292) 7.980(0.314) 2.540(0.100) 2.540(0.100)

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) S O I C - 8 U n i t : m m ( i n c h ) R0.150(0.006)

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) P S O P - 8 U n i t : m m ( i n c h ) 3.202(0.126) 3.402(0.134)

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800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277