AP2114 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Output V oltage Accuracy: ±1.5%
  • Output Current: 1A (Min.)
  • Fold-back Short Current Protection: 50mA
  • Low Dropout V oltage (3.3V): 450mV (Typ.) @IOUT=1A
  • Stable with 4.7µF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic
  • Excellent Line Regulation: 0.02%/V (Typ.), 0.1%/V (Max.) @ IOUT=30mA
  • Excellent Load Regulation: 0.2% @I OUT=0A to
  • Low Quiescent Current: 60µA (1.2V/1.8V/ 2.5V)
  • Low Output Noise: 30µVRMS
  • PSRR: 68dB @ Freq=1KHz (1.2V/1.8V)
  • OTSD Protection
  • Operating Temperature Range: -40°C to 85°C
  • ESD: MM 400V , HBM 4000V

Applications

  • LCD Monitor
  • LCD TV
  • STB

Figure 1. Package Types of AP2114

Figure 2. Pin Configuration of AP2114 (Top View)

8 EN Chip Enable, H – normal work, L – shutdown output

Figure 3. Functional Block Diagram of AP2114

P r e l i m i n a r y D a t a s h e e t 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

Ordering Information

G1: Green C i r c u i t T y p e P a c k a g e TR: Tape & Reel H: SOT-223 S: TO-263-3 M : S O I C - 8 M P : P S O P - 8 Package Temperature Range Part Number Marking ID Packing Type AP2114H-1.2TRG1 GH12C Tape & Reel AP2114H-1.8TRG1 GH12D Tape & Reel AP2114H-2.5TRG1 GH14C Tape & Reel SOT-223 -40 to 85°C AP2114H-3.3TRG1 GH12E Tape & Reel AP2114D-1.2TRG1 AP2114D-1.2G1 Tape & Reel AP2114D-1.8TRG1 AP2114D-1.8G1 Tape & Reel AP2114D-2.5TRG1 AP2114D-2.5G1 Tape & Reel TO-252-2 (1)/ TO-252-2 (3) -40 to 85°C AP2114D-3.3TRG1 AP2114D-3.3G1 Tape & Reel AP2114S-1.2TRG1 AP2114S-1.2G1 Tape & Reel AP2114S-1.8TRG1 AP2114S-1.8G1 Tape & Reel AP2114S-2.5TRG1 AP2114S-2.5G1 Tape & Reel TO-263-3 -40 to 85°C AP2114S-3.3TRG1 AP2114S-3.3G1 Tape & Reel AP2114M-1.2TRG1 2114M-1.2G1 Tape & Reel AP2114M-1.8TRG1 2114M-1.8G1 Tape & Reel AP2114M-2.5TRG1 2114M-2.5G1 Tape & Reel SOIC-8 -40 to 85°C AP2114M-3.3TRG1 2114M-3.3G1 Tape & Reel AP2114MP-1.2TRG1 2114MP-1.2G1 Tape & Reel AP2114MP-1.8TRG1 2114MP-1.8G1 Tape & Reel AP2114MP-2.5TRG1 2114MP-2.5G1 Tape & Reel PSOP-8 -40 to 85°C AP2114MP-3.3TRG1 2114MP-3.3G1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. 1.2: Fixed Output 1.2V 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 3.3: Fixed Output 3.3V

P r e l i m i n a r y D a t a s h e e t 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage V IN 6.5 V Operating Junction Temperature Range TJ 150 ºC Storage Temperature Range T STG -65 to 150 ºC Lead Temperature (Soldering, 10sec) T LEAD 260 ºC ESD (Machine Model) 400 V ESD (Human Body Model) 4000 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Co nditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage V IN 2.5 6.0 V Operating Ambient Temperature Range TA -40 85 °C

P r e l i m i n a r y D a t a s h e e t 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

Electrical Characteristics

AP2114-1.2 Electrical Characteristics (Note 2) (VIN=2.5V , CIN=4.7µF (Ceramic), C OUT=4.7µF (Ceramic), Typical T A = 25°C, Bold typeface applies over -40 OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Conditions Min Typ Max Unit Output V oltage V OUT V IN =2.5V , 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 1.2 VOUT ×101.5% V Input V oltage V IN 6.0 V Maximum Output Current I OUT(MAX) V IN=2.5V , VOUT=1.182V to 1.218V 1 A Load Regulation △VOUT/VOUT I△ OUT VIN=2.5V , 1mA ≤ IOUT ≤1A 0.2 1 %/A Line Regulation △VOUT/VOUT V△ IN 2.5V≤VIN≤6V , IOUT=30mA 0.02 ±0.1 %/V Dropout V oltage V DROP I OUT=1.0A 1200 1300 mV Quiescent Current I Q V IN=2.5V , IOUT=0mA 60 75 µA f=100Hz 68 Power Supply Rejectio n Ratio PSRR Ripple 1Vp-p VIN=2.5V , IOUT=100mA f=1KHz 68 dB Output V oltage Temperature Coefficient △VOUT/VOUT T△ IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE 10Hz ≤ f ≤100kHz (No Load) 30 µVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 VEN Low V oltage V IL Enable logic low, regulator off 0.4 V Standby Current I STD V IN=3.5V , VEN in OFF mode 0.01 1.0 µA Start-up Time T S No Load 20 µs EN Pull Down Resistor RPD 3.0 mΩ VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 25 SOIC-8 74.6 PSOP-8 43.7 SOT-223 50.9 Thermal Resistance (Junction to Case) θJC TO-263-3 22 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

P r e l i m i n a r y D a t a s h e e t 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2114-1.8 Electrical Characteristics (Note 2) (VIN=2.8V , CIN=4.7µF (Ceramic), C OUT=4.7µF (Ceramic), Typical T A = 25°C, Bold typeface applies over -40 OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Conditions Min Typ Max Unit Output V oltage V OUT V IN =2.8V , 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 1.8 VOUT ×101.5% V Maximum Output Current I OUT(MAX) V IN=2.8V , VOUT=1.773V to 1.827V 1.0 A Load Regulation △VOUT/VOUT I△ OUT VIN=2.8V , 1mA ≤ IOUT ≤1A 0.2 1.0 %/A Line Regulation △VOUT/VOUT V△ IN 2.8V≤VIN≤6V , IOUT=30mA 0.02 ±0.1 %/V Dropout V oltage V DROP I OUT=1.0A 500 700 mV Quiescent Current I Q V IN=2.8V , IOUT=0mA 60 75 µA f=100Hz 68 Power Supply Rejectio n Ratio PSRR Ripple 1Vp-p VIN=2.8V , IOUT=100mA f=1KHz 68 dB Output V oltage Temperature Coefficient △VOUT/VOUT T△ IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE 10Hz ≤ f ≤100kHz (No load) 30 µVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 VEN Low V oltage V IL Enable logic low, regulator off 0.4 V Standby Current I STD V IN=3.5V , VEN in OFF mode 0.01 1.0 µA Start-up Time T S No Load 20 µs EN Pull Down Resistor RPD 3.0 mΩ VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 25 SOIC-8 74.6 PSOP-8 43.7 SOT-223 50.9 Thermal Resistance (Junction to Case) θJC TO-263-3 22 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

P r e l i m i n a r y D a t a s h e e t 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2114-2.5 Electrical Characteristics (Note 2) (VIN=3.5V , CIN=4.7µF (Ceramic), C OUT=4.7µF (Ceramic), Typical T A = 25°C, Bold typeface applies over -40 OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Co nditions Min Typ Max Unit Output Voltage V OUT V IN =3.5V, 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 2.5 VOUT ×101.5% V Maximum Output Current I OUT(MAX) V IN=3.5V, VOUT=2.463V to 2.537V 1.0 A Load Regulation △VOUT/VOUT I△ OUT Vout=2.5V, VIN=Vout+1V 1mA ≤ IOUT ≤1A 0.2 1.0 %/A Line Regulation △VOUT/VOUT V△ IN 3.5V≤VIN≤6V, IOUT=30mA 0.02 ±0.1 %/V Dropout Voltage V DROP I OUT =1A 450 750 mV Quiescent Current I Q V IN=3.5V, IOUT=0mA 60 80 µA f=100Hz 65 Power Supply Rejection Ratio PSRR Ripple 1Vp-p VIN=3.5V, IOUT=100mA f=1KHz 65 dB Output Voltage Temperature Coefficient △VOUT/VOUT T△ IOUT=30mA ±30 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE 10Hz ≤ f ≤100kHz 30 µVRMS VEN High Voltage V IH Enable logic high, regulator on 1.5 VEN Low Voltage V IL Enable logic low, regulator off 0.4 V Standby Current I STD V IN=3.5V, VEN in OFF mode 0.01 1.0 µA Start-up Time T S No Load 20 µs EN Pull Down Resistor RPD 3.0 mΩ VOUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 25 SOIC-8 74.6 PSOP-8 43.7 SOT-223 50.9 Thermal Resistance (Junction to Case) θJC TO-263-3 22 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

P r e l i m i n a r y D a t a s h e e t 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2114-3.3 Electrical Characteristics (Note 2) (VIN=4.3V , CIN=4.7µF (Ceramic), C OUT=4.7µF (Ceramic), Typical T A = 25°C, Bold typeface applies over -40 OC≤TA≤85OC ranges, unless otherwise specified (Note 3)) Parameter Symbol Test Conditions Min Typ Max Unit Output V oltage V OUT V IN =4.3V , 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 3.3 VOUT ×101.5% V Maximum Output Current I OUT(MAX) V IN =4.3V , VOUT=3.25V to 3.35V 1.0 A Load Regulation △VOUT/VOUT I△ OUT VIN=4.3V , 1mA ≤ IOUT ≤1A 0.2 1.0 %/A Line Regulation △VOUT/VOUT V△ IN 4.3V≤VIN≤6V , IOUT=30mA 0.02 ±0.1 %/V Dropout V oltage V DROP I OUT=1A 450 750 mV Quiescent Current I Q V IN=4.3V , IOUT=0mA 65 90 µA f=100Hz 65 Power Supply Rejectio n Ratio PSRR Ripple 1Vp-p VIN=4.3V , IOUT=100mA f=1KHz 65 dB Output V oltage Temperature Coefficient △VOUT/VOUT △T IOUT=30mA ±30 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE 10Hz ≤ f ≤100kHz (No load) 30 µVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 VEN Low V oltage V IL Enable logic low, regulator off 0.4 V Standby Current I STD V IN=3.5V , VEN in OFF mode 0.01 1.0 µA Start-up Time T S No Load 20 µs EN Pull Down Resistor RPD 3.0 mΩ VOUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 25 SOIC-8 74.6 PSOP-8 43.7 SOT-223 50.9 Thermal Resistance (Junction to Case) θJC TO-263-3 22 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T A=25°C. Over temperature specifications guaranteed by design only.

Figure 44. PSRR vs. Frequency Figure 45. Load Transient

Figure 46. Typical Application of AP2114

P r e l i m i n a r y D a t a s h e e t 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Mechanical Dimensions SOT-223 Unit: mm(inch) 3.300(0.130) 3.700(0.146) 6.700(0.264) 7.300(0.287)

P r e l i m i n a r y D a t a s h e e t 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) TO-252-2 (1) Unit: mm(inch)

P r e l i m i n a r y D a t a s h e e t 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) TO-252-2 ( 3) Unit: mm(inch) 1.29±0.1 2.900REF 1.400(0.055) 1.700(0.067) 0.470(0.019) 0.600(0.024) 9.800(0.386) 10.40(0.409) 2.200(0.087) 2.380(0.094) 0.900(0.035) 1.100(0.043) 4.700REF 5.250REF 6.500(0.256) 6.700(0.264) 5.130(0.202) 5.460(0.215) 0.150(0.006) 0.750(0.030) 6.000(0.236) 6.200(0.244) 0.720(0.028) 0.850(0.033) 2.286(0.090) BSC 0.720(0.028) 0.900(0.035) 0.900(0.035) 1.250(0.049) 1.800REF 0.600(0.024) 1.000(0.039)

P r e l i m i n a r y D a t a s h e e t 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) TO-263-3 Unit: mm(inch) 8.640(0.340) 9.650(0.380) 0.990(0.039) 0.510(0.020) 2.540(0.100) 1.150(0.045) 9.650(0.380) 14.760(0.581) 8.840(0.348) 2.640(0.104) 0.020(0.001) 0.380(0.015) 2.200(0.087) 70° 10.290(0.405) 4.070(0.160) 4.820(0.190) 1.390(0.055) 1.150(0.045) 1.390(0.055) 2.540(0.100) 1.270(0.050) 1.390(0.055) 0.250(0.010) 2.700(0.106) 0.400(0.016) 5.600(0.220) 7.420(0.292) 7.980(0.314) 2.540(0.100) 2.540(0.100)

P r e l i m i n a r y D a t a s h e e t 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) S O I C - 8 U n i t : m m ( i n c h ) R0.150(0.006)

P r e l i m i n a r y D a t a s h e e t 1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114 Oct. 2010 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) P S O P - 8 U n i t : m m ( i n c h ) 3.202(0.126) 3.402(0.134)

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277