AP2112M-3.3G1 | DigiCamel IC Datasheet

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AP2112_12 BCDSEMI | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 20

Technical content

Features

Output V oltage Accuracy: ±1.5%
Output Current: 600mA (Min.)
Foldback Short Current Protection: 50mA
Enable Function to Turn ON/OFF V OUT
Low Dropout V oltage (3.3V): 250mV (Typ.) @IOUT=600mA
Excellent Load Regulation: 0.2%/A (Typ.)
Excellent Line Regulation: 0.02%/V (Typ.)
Low Quiescent Current: 55 µA (Typ.)
Low Standby Current: 0.01 µA (Typ.)
Low Output Noise: 50 µV RMS
PSRR: 100Hz -65dB, 1kHz -65dB
OTSD Protection
Stable with 1.0 µF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic
Operation Temperature Range: -40°C to 85°C
ESD: MM 400V , HBM 4000 V

Applications

Laptop Computer
Portable DVD
LCD Monitor

Figure 1. Package Types of AP2112

Figure 2. Pin Configuration of AP2112 (Top View)

5 EN Chip Enable, H – normal work, L – shutdown output

Figure 3. Functional Block Diagram of AP2112

600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mar. 2012 Rev. 1. 4 BCD Semiconductor Manufacturing Limited

Ordering Information

G1: Green C i r c u i t T y p e Package Temperature Range Condition Part Number Marking ID Packing Type 1.2V AP2112K-1.2TRG1 G3L Tape & Reel 1.8V AP2112K-1.8TRG1 G3M Tape & Reel 2.5V AP2112K-2.5TRG1 G3N Tape & Reel 2.6V AP2112K-2.6TRG1 G5N Tape & Reel 2.8V AP2112K-2.8TRG1 G3Q Tape & Reel SOT-23-5 -40 to 85°C 3.3V AP2112K-3.3TRG1 G3P Tape & Reel AP2112M-1.2G1 2112M-1.2G1 Tube 1.2V AP2112M-1.2TRG1 2112M-1.2G1 Tape & Reel AP2112M-1.8G1 2112M-1.8G1 Tube 1.8V AP2112M-1.8TRG1 2112M-1.8G1 Tape & Reel AP2112M-2.5G1 2112M-2.5G1 Tube 2.5V AP2112M-2.5TRG1 2112M-2.5G1 Tape & Reel AP2112M-2.6G1 2112M-2.6G1 Tube 2.6V AP2112M-2.6TRG1 2112M-2.6G1 Tape & Reel AP2112M-3.3G1 2112M-3.3G1 Tube SOIC-8 -40 to 85°C 3.3V AP2112M-3.3TRG1 2112M-3.3G1 Tape & Reel 1.2V(R5) AP2112R5-1.2TRG1 G37D Tape & Reel 1.8V(R5) AP2112R5-1.8TRG1 G37E Tape & Reel 2.5V(R5) AP2112R5-2.5TRG1 G37F Tape & Reel 2.6V(R5) AP2112R5-2.6TRG1 G13F Tape & Reel SOT-89-5 -40 to 85°C 3.3V(R5) AP2112R5-3.3TRG1 G37G Tape & Reel 1.2V(R5A) AP2112R5A-1.2TRG1 G33C Tape & Reel 1.8V(R5A) AP2112R5A-1.8TRG1 G33E Tape & Reel 2.5V(R5A) AP2112R5A-2.5TRG1 G28G Tape & Reel 2.6V(R5A) AP2112R5A-2.6TRG1 G13E Tape & Reel SOT-89-5 -40 to 85°C 3.3V(R5A) AP2112R5A-3.3TRG1 G28H Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Blank: Tube TR: Tape & Reel 1.2V: Fixed Output 1.2V 1.8V: Fixed Output 1.8V 2.5V: Fixed Output 2.5V 2.6V: Fixed Output 2.6V 2.8V: Fixed Output 2.8V 3.3V: Fixed Output 3.3V Package K: SOT-23-5 M: SOIC-8 R5/R5A: SOT-89-5

600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mar. 2012 Rev. 1. 4 BCD Semiconductor Manufacturing Limited Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage V CC 6.5 V Operating Junction Temperature Range TJ 150 ºC Storage temperature Range T STG -65 to 150 ºC Lead Temperature (Soldering, 10 Seconds) TLEAD 260 ºC SOT-23-5 184 SOIC-8 114 Thermal Resistance （Junction to Ambient）(No Heatsink) θJA SOT-89-5 120 °C /W ESD (Machine Model) 400 V ESD (Human Body Model) 4000 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Co nditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage V IN 2.5 6.0 V Ambient Operation Temperature Range TA -40 85 °C

600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mar. 2012 Rev. 1. 4 BCD Semiconductor Manufacturing Limited

Electrical Characteristics

AP2112-1.2 Electrical Characteristic (Note 2) VIN=2.5V , CIN=1.0µF (Ceramic), C OUT=1.0µF (Ceramic), Typical T A= 25°C, Bold typeface applies over -40°C ≤TJ≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Test Conditions Min Typ Max Unit Output V oltage V OUT V IN =2.5V , 1mA ≤ IOUT ≤ 30mA VOUT *98.5% 1.2 VOUT *101.5% V Maximum Output Current IOUT(MAX) VIN =2.5V , VOUT=1.182V to 1.218V 600 mA Load Regulation (V△ OUT/VOUT)/ △IOUT VIN=2.5V , 1mA ≤ IOUT ≤600mA -1 0.2 1 %/A Line Regulation (V△ OUT/VOUT)/ △VIN 2.5V≤VIN≤6V , IOUT=30mA -0.1 0.02 0.1 %/V IOUT =10mA 1000 1300 IOUT =300mA 1000 1300 Dropout V oltage V DROP IOUT=600mA 1000 1300 mV Quiescent Current I Q V IN=2.5V , IOUT=0mA 55 80 µA Standby Current I STD V IN=2.5V , VEN in OFF mode 0.01 1.0 µA f=100Hz 65 Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=2.5V , IOUT=100mA f=1KHz 65 dB Output V oltage Temperature Coefficient (V△ OUT/VOUT)/ T△ IOUT=30mA TA =-40°C to 85°C ±100 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 6.0 VEN Low V oltage V IL Enable logic low, regulator off 0 0.4 V Start-up Time t S No Load 20 µs EN Pull Down Resistor R PD 3.0 MΩ VOUT discharge Resistor RDCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 25 SOT-23-5 96 SOIC-8 75 Thermal Resistance θJC SOT-89-5 47 °C/W

600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mar. 2012 Rev. 1. 4 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2112-1.8 Electrical Characteristic (Note 2) VIN=2.8V , CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Test Conditions Min Typ Max Unit Output V oltage V OUT V IN =2.8V , 1mA ≤ IOUT ≤ 30mA VOUT *98.5% 1.8 VOUT *101.5% V Maximum Output Current I OUT(MAX) VIN=2.8V , VOUT=1.773V to 1.827V 600 mA Load Regulation (V△ OUT/VOUT)/ △IOUT VOUT=1.8V , V IN=VOUT+1V , 1mA ≤ IOUT ≤600mA -1 0.2 1 %/A Line Regulation (V△ OUT/VOUT)/ △VIN 2.8V≤VIN≤6V , IOUT=30mA -0.1 0.02 0.1 %/V IOUT =10mA 500 700 IOUT =300mA 500 700 Dropout V oltage V DROP IOUT=600mA 500 700 mV Quiescent Current I Q V IN=2.8V , IOUT=0mA 55 80 µA Standby Current I STD V IN=2.8V , VEN in OFF mode 0.01 1.0 µA f=100Hz 65 Power Supply Rejectio n Ratio PSRR Ripple 0.5Vp-p VIN=2.8V , IOUT=100mA f=1KHz 65 dB Output V oltage Temperature Coefficient (V△ OUT/VOUT)/ T△ IOUT=30mA TA =-40°C to 85°C ±100 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 6.0 VEN Low V oltage V IL Enable logic low, regulator off 0 0.4 V Start-up Time t S No Load 20 µs EN Pull Down Resistor R PD 3.0 MΩ VOUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 25 SOT-23-5 96 SOIC-8 75 Thermal Resistance θJC SOT-89-5 47 °C/W

600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mar. 2012 Rev. 1. 4 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2112-2.5 Electrical Characteristic (Note 2) VIN=3.5V , CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Test Conditions Min Typ Max Unit Output V oltage V OUT V IN =3.5V , 1mA ≤ IOUT ≤ 30mA VOUT *98.5% 2.5 VOUT *101.5% V Maximum Output Current I OUT(MAX) VIN=3.5V , V OUT=2.463V to 2.537V 600 mA Load Regulation (V△ OUT/VOUT)/ △IOUT VOUT=2.5V , V IN=VOUT+1V , 1mA ≤ IOUT ≤600mA -1 0.2 1 %/A Line Regulation (V△ OUT/VOUT)/ △VIN 3.5V≤VIN≤6V , IOUT=30mA -0.1 0.02 0.1 %/V IOUT =10mA 5 8 IOUT =300mA 125 200 Dropout V oltage V DROP IOUT=600mA 250 400 mV Quiescent Current I Q V IN=3.5V , IOUT=0mA 55 80 µA Standby Current I STD V IN=3.5V , VEN in OFF mode 0.01 1.0 µA f=100Hz 65 Power Supply Rejectio n Ratio PSRR Ripple 0.5Vp-p VIN=3.5V , IOUT=100mA f=1KHz 65 dB Output V oltage Temperature Coefficient (V△ OUT/VOUT)/ T△ IOUT=30mA TA =-40°C to 85°C ±100 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 6.0 VEN Low V oltage V IL Enable logic low, regulator off 0 0.4 V Start-up Time t S No Load 20 µs EN Pull Down Resistor R PD 3.0 MΩ VOUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 25 SOT-23-5 96 SOIC-8 75 Thermal Resistance θJC SOT-89-5 47 °C/W

600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mar. 2012 Rev. 1. 4 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2112-2.6 Electrical Characteristic (Note 2) VIN=3.6V , CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Test Conditions Min Typ Max Unit Output V oltage V OUT V IN =3.6V , 1mA ≤ IOUT ≤ 30mA VOUT *98.5% 2.6 VOUT *101.5% V Maximum Output Current I OUT(MAX) VIN=3.6V , V OUT=2.561V to 2.639V 600 mA Load Regulation V△ OUT/VOUT)/ △IOUT VOUT=2.6V , VIN=VOUT+1V , 1mA ≤ IOUT ≤600mA -1 0.2 1 %/A Line Regulation (V△ OUT/VOUT)/ △VIN 3.6V≤VIN≤6V , IOUT=30mA -0.1 0.02 0.1 %/V IOUT =10mA 5 8 IOUT =300mA 125 200 Dropout V oltage V DROP IOUT=600mA 250 400 mV Quiescent Current I Q V IN=3.6V , IOUT=0mA 55 80 µA Standby Current I STD V IN=3.6V , VEN in OFF mode 0.01 1.0 µA f=100Hz 65 Power Supply Rejectio n Ratio PSRR Ripple 0.5Vp-p VIN=3.6V , IOUT=100mA f=1KHz 65 dB Output V oltage Temperature Coefficient (△VOUT/VOUT)/ △T IOUT=30mA TA =-40°C to 85°C ±100 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 6.0 VEN Low V oltage V IL Enable logic low, regulator off 0 0.4 V Start-up Time t S No Load 20 µs EN Pull Down Resistor R PD 3.0 MΩ VOUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 25 SOT-23-5 96 SOIC-8 75 Thermal Resistance θJC SOT-89-5 47 °C/W

600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mar. 2012 Rev. 1. 4 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2112-2.8 Electrical Characteristic (Note 2) VIN=3.8V , CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Test Conditions Min Typ Max Unit Output V oltage V OUT V IN =3.8V , 1mA ≤ IOUT ≤ 30mA VOUT *98.5% 2.8 VOUT *101.5% V Maximum Output Current I OUT(MAX) VIN=3.8V , V OUT=2.758V to 2.842V 600 mA Load Regulation (V△ OUT/VOUT)/ △IOUT VOUT=2.8V , V IN=VOUT+1V , 1mA ≤ IOUT ≤600mA -1 0.2 1 %/A Line Regulation (V△ OUT/VOUT)/ △VIN 3.8V≤VIN≤6V , IOUT=30mA -0.1 0.02 0.1 %/V IOUT =10mA 5 8 IOUT =300mA 125 200 Dropout V oltage V DROP IOUT=600mA 250 400 mV Quiescent Current I Q V IN=3.8V , IOUT=0mA 55 80 µA Standby Current I STD V IN=3.8V , VEN in OFF mode 0.01 1.0 µA f=100Hz 65 Power Supply Rejectio n Ratio PSRR Ripple 0.5Vp-p VIN=3.8V , IOUT=100mA f=1KHz 65 dB Output V oltage Temperature Coefficient (V△ OUT/VOUT)/ T△ IOUT=30mA TA =-40°C to 85°C ±100 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 6.0 VEN Low V oltage V IL Enable logic low, regulator off 0 0.4 V Start-up Time t S No Load 20 µs EN Pull Down Resistor R PD 3.0 MΩ VOUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 25 SOT-23-5 96 SOIC-8 75 Thermal Resistance θJC SOT-89-5 47 °C/W

600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mar. 2012 Rev. 1. 4 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2112-3.3 Electrical Characteristic (Note 2) VIN=4.3V , CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA =25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Test Conditions Min Typ Max Unit Output V oltage V OUT V IN =4.3V , 1mA ≤ IOUT ≤ 30mA VOUT *98.5% 3.3 VOUT *101.5% V Maximum Output Current I OUT(MAX) VIN=4.3V , V OUT=3.251V to 3.350V 600 mA Load Regulation (V△ OUT/VOUT)/ △IOUT VIN=4.3V , 1mA ≤ IOUT ≤600mA -1 0.2 1 %/A Line Regulation (V△ OUT/VOUT)/ △VIN 4.3V≤VIN≤6V , IOUT=30mA -0.1 0.02 0.1 %/V IOUT =10mA 5 8 IOUT =300mA 125 200 Dropout V oltage V DROP IOUT=600mA 250 400 mV Quiescent Current I Q V IN=4.3V , IOUT=0mA 55 80 µA Standby Current I STD V IN=4.3V , VEN in OFF mode 0.01 1.0 µA f=100Hz 65 Power Su pply Rejectio n Ratio PSRR Ripple 0.5Vp-p VIN=4.3V , IOUT=100mA f=1KHz 65 dB Output V oltage Temperature Coefficient (V△ OUT/VOUT)/ T△ IOUT=30mA TA =-40°C to 85°C ±100 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 6.0 VEN Low V oltage V IL Enable logic low, regulator off 0 0.4 V Start-up Time t S No Load 20 µs EN Pull Down Resistor R PD 3.0 MΩ VOUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 Thermal Shutdown Hysteresis THYOTSD 25 SOT-23-5 96 SOIC-8 75 Thermal Resistance θJC SOT-89-5 47 °C/W

Figure 20. AP2112 Typical Application

600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mar. 2012 Rev. 1. 4 BCD Semiconductor Manufacturing Limited Mechanical Dimensions SOT-23-5 Unit: mm(inch) 2.820(0.111) 0.000(0.000) 0.300(0.012) 0.950(0.037) 0.900(0.035) 0.100(0.004) 0.200(0.008) 3.020(0.119) 0.400(0.016) 0.150(0.006) 1.300(0.051) 0.200(0.008) 1.800(0.071) 2.000(0.079) 0.700(0.028) REF TYP

600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mar. 2012 Rev. 1. 4 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) SO T-89-5 Unit: mm(inch) 1.030(0.041)REF 1.550(0.061)REF 4.400(0.173) 4.600(0.181) 0.900(0.035) 1.100(0.043) 3.950(0.156) 4.250(0.167) 3.000(0.118) TYP 0.480(0.019) 1.100(0.043) 0.900(0.035) 2.300(0.091) 2.600(0.102) 0.320(0.013) 0.520(0.020) 3 10 2.060(0.081)REF 1.400(0.055) 1.600(0.063) 0.350(0.014) 0.450(0.018) R0.150(0.006) 1.500(0.059) 0.320(0.013)REF 1.620(0.064)REF 2.210(0.087)REF 0.320(0.013) 0.520(0.020) 1.800(0.071)

600mA CMOS LDO REGULATOR WITH ENABLE AP2112 Mar. 2012 Rev. 1. 4 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) S O I C - 8 U n i t : m m ( i n c h ) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) Note: Eject hole, oriented hole and mold mark is optional.

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277

Product Information

AP2112M-3.3G1 specifications and overview.

Summary

600mA CMOS LDO REGULATOR WITH ENABLE

Description

600mA CMOS LDO REGULATOR WITH ENABLE

Source title AP2112M-3.3G1 Datasheet(PDF) - BCD Semiconductor Manufacturing Limited

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