AP2111_12 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Output V oltage Accuracy: ±1.5%
  • Output Current: 600mA (Min)
  • Foldback Short Current Protection: 50mA
  • Enable Function to Turn On/Off V OUT
  • Low Dropout V oltage (3.3V): 250mV (Typ) @ IOUT=600mA
  • Excellent Load Regulation: 0.2%/A (Typ)
  • Excellent Line Regulation: 0.02%/V (Typ)
  • Low Quiescent Current: 55 μA (Typ)
  • Low Standby Current: 0.01 μA (Typ)
  • Low Output Noise: 50 μV RMS
  • PSRR: 65dB @ f=1kHz, 65dB @ f=100Hz
  • OTSD Protection
  • Stable with 1.0 μF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic
  • Operating Temperature Range: -40°C to 85°C
  • ESD: MM 400V , HBM 4000V

Applications

  • Laptop computer
  • Potable DVD
  • LCD Monitor

Figure 1. Package Types of AP2111

Figure 2. Pin Configuration of AP2111 (Top View)

5 ADJ/NC Adjust output for ADJ version/No connected for

600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Ordering Information

Range Part Number Marking ID Packing Type SOIC-8 -40 to 85°C AP2111M-1.2G1 2111M-1.2G1 Tube AP2111M-1.2TRG1 2111M-1.2G1 Tape & Reel AP2111M-1.8G1 2111M-1.8G1 Tube AP2111M-1.8TRG1 2111M-1.8G1 Tape & Reel AP2111M-2.5G1 2111M-2.5G1 Tube AP2111M-2.5TRG1 2111M-2.5G1 Tape & Reel AP2111M-3.3G1 2111M-3.3G1 Tube AP2111M-3.3TRG1 2111M-3.3G1 Tape & Reel PSOP-8 -40 to 85°C AP2111MP-1.2G1 2111MP-1.2G1 Tube AP2111MP-1.2TRG1 2111MP-1.2G1 Tape & Reel AP2111MP-1.8G1 2111MP-1.8G1 Tube AP2111MP-1.8TRG1 2111MP-1.8G1 Tape & Reel AP2111MP-2.5G1 2111MP-2.5G1 Tube AP2111MP-2.5TRG1 2111MP-2.5G1 Tape & Reel AP2111MP-3.3G1 2111MP-3.3G1 Tube AP2111MP-3.3TRG1 2111MP-3.3G1 Tape & Reel SOT-223 -40 to 85°C AP2111H-1.2TRG1 GH11B Tape & Reel AP2111H-1.8TRG1 GH11G Tape & Reel AP2111H-2.5TRG1 GH11H Tape & Reel AP2111H-3.3TRG1 GH11C Tape & Reel AP2111H-4.8TRG1 GH13D Tape & Reel SOT-23-5 -40 to 85°C AP2111K-ADJG1 G3Q Tube AP2111K-ADJTRG1 G3Q Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Package M: SOIC-8 MP: PSOP-8 H: SOT-223 K: SOT-23-5 1.2: Fixed Output 1.2V 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 3.3: Fixed Output 3.3V 4.8: Fixed Output 4.8V ADJ: Adjustable Output Circuit Type G1: Green Blank: Tube TR: Ta pe & Reel

600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage V IN 6.5 V Operating Junction Temperature Range TJ 150 ºC Storage Temperature Range T STG -65 to 150 ºC Lead Temperature (Soldering, 10sec) T LEAD 260 ºC Thermal Resistance (No Heatsink) θJA SOIC-8 144 ºC/W PSOP-8 143 SOT-223 128 SOT-23-5 250 ESD (Machine Model) 400 V ESD (Human Body Model) 4000 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under “Recommended Operating Co nditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Typ Max Unit Supply Voltage V IN 2.5 6.0 V Operating Ambient Temperature Range TA -40 85 °C

600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited

Electrical Characteristics

AP2111-1.2 Electrical Characteristic (Note 2) VIN=2.5V , CIN=1.0μF (Ceramic), C OUT=1.0μF (Ceramic), Typical T A=25°C, Bold typeface applies over -40°C ≤TA≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T A=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Condi tions Min Typ Max Unit Output V oltage V OUT V IN =2.5V , 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 1.2 VOUT ×101.5% V Maximum Output Current IOUT(Max) V IN=2.5V , VOUT=1.182V to 1.218V 600 mA Load Regulation (V△ OUT/VOUT) △IOUT VIN=2.5V , 1mA ≤ IOUT ≤600mA 0.2 %/A Line Regulation (V△ OUT/VOUT) △VIN 2.5V≤VIN≤6V , IOUT=30mA 0.02 %/V Dropout V oltage V DROP IOUT =10mA 1000 1300 mV IOUT =300mA 1000 1300 IOUT=600mA 1000 1300 Quiescent Current I Q V IN=2.5V , IOUT=0mA 55 80 μA Standby Current I STD V IN=2.5V , VEN in OFF mode 0.01 1.0 μA Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=2.5V , IOUT=100mA f=100Hz 65 dB f=1kHz 65 Output V oltage Temperature Coefficient (V△ OUT/VOUT) IOUT=30mA TA=-40°C to 85°C ±100 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE No Load, 10Hz ≤ f ≤100kHz 50 μVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 6.0 V VEN Low V oltage V IL Enable logic low, regulator off 0 0.4 Start-up Time t S No Load 20 μs EN Pull Down Resistor R PD 3.0 mΩ VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 30 Thermal Resistance (Junction to Case) θJC SOIC-8 74.6 °C /WPSOP-8 43.7 SOT-223 50.9

600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2111-1.8 Electrical Characteristic (Note 2) VIN=2.8V , CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Conditi ons Min Typ Max Unit Output V oltage V OUT V IN =2.8V , 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 1.8 VOUT ×101.5% V Maximum Output Current I OUT(Max) VIN=2.8V , VOUT=1.773V to 1.827V 600 mA Load Regulation (V△ OUT/VOUT) △IOUT VOUT=1.8V , V IN=VOUT+1V , 1mA ≤ IOUT ≤600mA 0.2 %/A Line Regulation (V△ OUT/VOUT) △VIN 2.8V≤VIN≤6V , IOUT=30mA 0.02 %/V Dropout V oltage V DROP IOUT =10mA 500 700 mV IOUT =300mA 500 700 IOUT=600mA 500 700 Quiescent Current I Q V IN=2.8V , IOUT=0mA 55 80 μA Standby Current I STD V IN=2.8V , VEN in OFF mode 0.01 1.0 μA Power Supply Rejectio n Ratio PSRR Ripple 0.5Vp-p VIN=2.8V , IOUT=100mA f=100Hz 65 dB f=1kHz 65 Output V oltage Temperature Coefficient (V△ OUT/VOUT) IOUT=30mA TA=-40°C to 85°C ±100 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE No Load, 10Hz ≤ f ≤100kHz 50 μVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 6.0 V VEN Low V oltage V IL Enable logic low, regulator off 0 0.4 Start-up Time t S No Load 20 μs EN Pull Down Resistor R PD 3.0 mΩ VOUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 30 Thermal Resistance (Junction to Case) θJC SOIC-8 74.6 °C /WPSOP-8 43.7 SOT-223 50.9

600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2111-2.5 Electrical Characteristic (Note 2) VIN=3.5V , CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Conditi ons Min Typ Max Unit Output V oltage V OUT V IN =3.5V , 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 2.5 VOUT ×101.5% V Maximum Output Current I OUT(Max) VIN=3.5V , V OUT=2.463V to 2.537V 600 mA Load Regulation (V△ OUT/VOUT) △IOUT VOUT=2.5V , V IN=VOUT+1V , 1mA ≤ IOUT ≤600mA 0.2 %/A Line Regulation (V△ OUT/VOUT) △VIN 3.5V≤VIN≤6V , IOUT=30mA 0.02 %/V Dropout V oltage V DROP IOUT =10mA 5 8 mV IOUT =300mA 125 200 IOUT=600mA 250 400 Quiescent Current I Q V IN=3.5V , IOUT=0mA 55 80 μA Standby Current I STD V IN=3.5V , VEN in OFF mode 0.01 1.0 μA Power Supply Rejectio n Ratio PSRR Ripple 0.5Vp-p VIN=3.5V , IOUT=100mA f=100Hz 65 dB f=1kHz 65 Output V oltage Temperature Coefficient (V△ OUT/VOUT) IOUT=30mA TA=-40°C to 85°C ±100 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE No Load, 10Hz ≤ f ≤100kHz 50 μVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 6.0 V VEN Low V oltage V IL Enable logic low, regulator off 0 0.4 Start-up Time t S No Load 20 μs EN Pull Down Resistor R PD 3.0 mΩ VOUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 30 Thermal Resistance (Junction to Case) θJC SOIC-8 74.6 °C /WPSOP-8 43.7 SOT-223 50.9

600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2111-3.3 Electrical Characteristic (Note 2) VIN=4.3V , CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Conditi ons Min Typ Max Unit Output V oltage V OUT V IN =4.3V , 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 3.3 VOUT ×101.5% V Maximum Output Current I OUT(Max) VIN=4.3V , V OUT=3.251V to 3.350V 600 mA Load Regulation (V△ OUT/VOUT) △IOUT VIN=4.3V , 1mA ≤ IOUT ≤600mA 0.2 %/A Line Regulation (V△ OUT/VOUT) △VIN 4.3V≤VIN≤6V , IOUT=30mA 0.02 %/V Dropout V oltage V DROP IOUT =10mA 5 8 mV IOUT =300mA 125 200 IOUT=600mA 250 400 Quiescent Current I Q V IN=4.3V , IOUT=0mA 55 80 μA Standby Current I STD V IN=4.3V , VEN in OFF mode 0.01 1.0 μA Power Supply Rejectio n Ratio PSRR Ripple 0.5Vp-p VIN=4.3V , IOUT=100mA f=100Hz 65 dB f=1kHz 65 Output V oltage Temperature Coefficient (V△ OUT/VOUT) IOUT=30mA TA=-40°C to 85°C ±100 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE No Load, 10Hz ≤ f ≤100kHz 50 μVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 6.0 V VEN Low V oltage V IL Enable logic low, regulator off 0 0.4 Start-up Time t S No Load 20 μs EN Pull Down Resistor R PD 3.0 mΩ VOUT Discharge Resistor R DCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 30 Thermal Resistance (Junction to Case) θJC SOIC-8 74.6 °C /WPSOP-8 43.7 SOT-223 50.9

600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2111-4.8 Electrical Characteristic (Note 2) (Only for SOT-223) VIN=5.5V , CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Conditi ons Min Typ Max Unit Output V oltage V OUT V IN =5.5V , 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 4.8 VOUT ×101.5% V Maximum Output Current I OUT(Max) VIN=5.5V , V OUT=4.751V to 4.850V 600 mA Load Regulation (V△ OUT/VOUT) △IOUT VIN=5.5V , 1mA ≤ IOUT ≤600mA 0.2 %/A Line Regulation (V△ OUT/VOUT) △VIN 5.5V≤VIN≤6V , IOUT=30mA 0.02 %/V Dropout V oltage V DROP IOUT =10mA 5 8 mV IOUT =300mA 100 200 IOUT=600mA 200 400 Quiescent Current I Q V IN=5.5V , IOUT=0mA 55 80 μA Standby Current I STD V IN=5.5V , VEN in OFF mode 0.01 1.0 μA Power Supply Rejectio n Ratio PSRR Ripple 0.5Vp-p VIN=5.5V , IOUT=100mA f=100Hz 65 dB f=1kHz 65 Output V oltage Temperature Coefficient (V△ OUT/VOUT) IOUT=30mA TA=-40°C to 85°C ±100 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE No Load, 10Hz ≤ f ≤100kHz 50 μVRMS Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 30 Thermal Resistance (Junction to Case) θJC SOT-223 50.9

600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) VIN=2.5V , CIN=1.0μF (Ceramic), C OUT=1.0μF (Ceramic), Typical T A=25°C, Bold typeface applies over -40°C ≤TA≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Condi tions Min Typ Max Unit Reference V oltage V REF V IN =2.5V , 1mA ≤ IOUT ≤ 30mA VREF ×98.5% 0.8 VREF ×101.5% V Maximum Output Current IOUT(Max) V IN=2.5V , VREF=0.788V to 0.812V 600 mA Load Regulation (V△ OUT/VOUT) △IOUT VIN=2.5V , 1mA ≤ IOUT ≤600mA 0.2 %/A Line Regulation (V△ OUT/VOUT) △VIN 2.5V≤VIN≤6V , IOUT=30mA 0.02 %/V Quiescent Current I Q V IN=2.5V , IOUT=0mA 55 80 μA Standby Current I STD V IN=2.5V , VEN in OFF mode 0.01 1.0 μA Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=2.5V , IOUT=100mA f=100Hz 65 dB f=1kHz 65 Output V oltage Temperature Coefficient (V△ OUT/VOUT) IOUT=30mA TA=-40°C to 85°C ±100 ppm/°C Short Current Limit I SHORT V OUT=0V 50 mA RMS Output Noise V NOISE No Load, 10Hz ≤ f ≤100kHz 50 μVRMS VEN High V oltage V IH Enable logic high, regulator on 1.5 6.0 V VEN Low V oltage V IL Enable logic low, regulator off 0 0.4 Start-up Time t S No Load 20 μs EN Pull Down Resistor R PD 3.0 mΩ VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 30 Thermal Resistance (Junction to Case) θJC SOT-23-5 150 °C /W

Figure 24. Typical Application of AP2111

600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited Mechanical Dimensions S O I C - 8 U n i t : m m ( i n c h ) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) Note: Eject hole, oriented hole and mold mark is optional.

600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) P S O P - 8 U n i t : m m ( i n c h ) 3.202(0.126) 3.402(0.134)

600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) SOT-223 Unit: mm(inch) 3.300(0.130) 3.700(0.146) 6.700(0.264) 7.300(0.287)

600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) SOT-23-5 Unit: mm(inch) 2.820(0.111) 0.000(0.000) 0.300(0.012) 0.950(0.037) 0.900(0.035) 0.100(0.004) 0.200(0.008) 3.020(0.119) 0.400(0.016) 0.150(0.006) 1.300(0.051) 0.200(0.008) 1.800(0.071) 2.000(0.079) 0.700(0.028) REF TYP

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277