AP20G45EH A-POWER | Alldatasheet

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Electronics Corp. BIPOLAR TRANSISTOR

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  • High Input Impedance * High Pick Current Capability * 4.5V Gate Drive * Strobe Flash Applications Absolute Maximum Ratings Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Min. Typ. Max. Units IGES uA ICES uA VCE(sat) V VGE(th) 1.2 V Qg nC Qge nC Qgc 5.4 nC td(on) 5.5 ns tr ns td(off) 640 ns tf 2.6 us Cies 2095 pF Coes 145 pF Cres pF Rthj-c ℃/W Data and specifications subject to change without notice V 200124032 VCC=200V V Gate-Emitter Voltage Gate-Emitter Charge Operating Junction Temperature Range -55 to 150 -55 to 150 W Parameter Storage Temperature Range Pulsed Collector Current Parameter Maximum Power Dissipation VGE ICP IGEP Pulsed Gate-Emitter Voltage PD@TC=25℃ 450 ± 6 130 ± 8 AP20G45EH/J Symbol VCES 450V 130A Rating Collector-Emitter Voltage Units V A Reverse Transfer Capacitance VCE=450V, VGE=0V VGE=4.5V, ICP=130A (Pulsed) VCE=VGE, IC=250uA IC=40A VCE=300V VGE=5V VCE=25V Test Conditions Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Leakage Current Collector-Emitter Leakage Current (Tj=25℃) VGE=6V, VCE=0V TSTG Turn-off Delay Time VGE=0V IC=40A RG=25Ω Rise Time TJ Gate-Collector Charge Turn-on Delay Time VGE=5V Thermal Resistance Junction-Case Fall Time Input Capacitance Output Capacitance f=1.0MHz G C E TO-252(H) G C E TO-251(J) G C E

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Collector Current v.s. Fig 4. Collector- Emitter Saturation Voltage Gate-Emitter Voltage v.s. Case Temperature AP20G45EH/J 120 160 V CE , Collector Emitter Voltage (V) IC , Collector Current (A) T C=25 oC V G=5.0V V G=4.5V V G=4.0V V G=3.0V V G=2.0V V G=1.0V 120 V CE, Collector-Emitter Voltage (V) IC , Collector Current (A) T C =150 o C V G =5.0V V G =4.5V V G =4.0V V G =3.0V V G =2.0V V G =1.0V 120 160 V GE , Gate- Emitter Voltage (V) IC , Collector Current (A) T C=25 oC T C=70 oC T C=100 oC T C=150 oC V CE =8V 100 120 140 160 T C , Case Temperature ( oC ) VCE(sat) , Saturation Voltage (V) I C = 130A I C = 100A I C = 70A I C = 35A V GE = 4.5 V

Fig 5. Gate-Emitter Cut-Off Voltage Fig 6. Safe Operation Area v.s. Case Temperature Fig 7. Collector v.s. Collector-Emitter Voltage Fig 8. Gate Charge Waveform AP20G45EH/J 0.5 1.5 -50 100 150 T C , Case Temperature ( oC ) VGE(th) Gate Threshold Voltage (V) Q G , Gate Charge (nC) VGE , Gate-Emitter Voltage (V) I CP =40A V CE =300V 120 160 V GE , Gate-Emitter Voltage (V) ICP , Peak Collector Current (A) V G =4.5V T C = 25 o C 100 1000 10000 V CE , Collector-Emitter Voltage (V) Capacitance (pF) f=1.0MHz Cies Cies Cies Cies Coes Coes Coes Coes Cres Cres Cres Cres

Fig 9. Switching Time Test Circuit Fig 10. Switching Time Waveform Fig 11. Gate Charge Test Circuit Fig 12. Application Test Circuit AP20G45EH/J td(on) tr td(off) tf VCE VGE 10% 90% V =200V TO THE OSCILLOSCOPE 5 V C G E V CE VGE R R C G CC 300V TO THE OSCILLOSCOPE C G VCE VGE I C IG 1~3 mA E VCM VCM = 300V CM = 160uF ICP = 130A VG = 5V CM RG Vtrig IGBT VG Flasher