AP2030SD

AP2030SD A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement N-CH BV DSS 20V ▼ ▼ ▼ ▼ Low On-resistance RDS(ON) 60mΩ ▼ ▼ ▼ ▼ Fast Switching ID 2.6A P-CH BV DSS -20V RDS(ON) 80mΩ Description ID -2.3A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 20 -20 V VGS Gate-Source Voltage ±12 ±12 V ID@TA=25℃ Continuous Drain Current3 2.6 -2.3 A ID@TA=70℃ Continuous Drain Current3 2.1 -1.8 A IDM Pulsed Drain Current1 15 -10 A PD@TA=25℃ Total Power Dissipation W Linear Derating Factor W/ ℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice Parameter 200728042 AP2030SD Thermal Data 0.016 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. PDIP-8

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 -V / ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=2.6A - - 60 mΩ VGS=2.5V, ID=1.8A - - 90 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance V DS=5V, ID=2.6A - 3.6 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=16V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±12V - - nA Qg Total Gate Charge2 ID=2.6A - 9 - nC Qgs Gate-Source Charge V DS=10V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4 - nC td(on) Turn-on Delay Time2 VDS=10V - 6.5 - ns tr Rise Time I D=1A - 14 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=4.5V - 20 - ns tf Fall Time R D=10Ω -1 5- ns Ciss Input Capacitance V GS=0V - 300 - pF Coss Output Capacitance V DS=8V - 255 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 1.7 A VSD Forward On Voltage2 Tj=25℃, IS=1.7A, VGS=0V - - 1.2 V AP2030SD ±100

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA -20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.037 -V / ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-2.2A - - 80 mΩ VGS=-2.5V, ID=-1.8A - - 135 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.5 - -1 V gfs Forward Transconductance V DS=-5V, ID=-2.2A - 2.7 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150oC) VDS=-16V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=±12V - - nA Qg Total Gate Charge2 ID=-2.2A - 11.5 - nC Qgs Gate-Source Charge V DS=-6V - 3.2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 1.5 - nC td(on) Turn-on Delay Time2 VDS=-10V - - 10 ns tr Rise Time I D=-2.2A - - 25 ns td(off) Turn-off Delay Time R G=6Ω,VGS=-4.5V - - 50 ns tf Fall Time R D=4.5Ω -- 3 0 ns Ciss Input Capacitance V GS=0V - 940 - pF Coss Output Capacitance V DS=-15V - 440 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1.7 A VSD Forward On Voltage2 Tj=25℃, IS=-1.8A, VGS=0V - -0.75 -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad. ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP2030SD 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 4.5V 4.0V 3.5V 3,0V V GS =2.5V 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 4.5V 3.5V 3.0V 2.5V V GS =2. 0 V 2345 V GS (V) RDS(ON) (m ΩΩΩΩ) I D =2.6A T C =25 ℃℃℃℃ 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =2.6A V GS =4.5V

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A) 0.01 0.1 100 0.1 1 10 100 V DS (V) ID (A) T C =25 o C Single Pulse 1ms 10ms 100ms 10s DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=90oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse 0.6 1.2 1.8 2.4 0 50 100 150 T c ,Case Temperature ( o C) PD (W)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 1000 1 5 9 1 31 72 12 52 9 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 02468 1 0 1 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2.6A V DS =10V 0.01 0.1 100 V SD (V) IS(A) T j =25 o C T j =150 o C 0.5 1.5 -50 0 50 100 150 T j ,Junction Temperature ( o C) VGS(th) (V)

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 4..5V D G S VDS VGS RG RD 0.5 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V GS = -4.5V I D =-2.2A 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -4.5V -4.0V -3.5V -3,0V V GS = - 2.5V 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -4.5V -4.0V -3.5V -3,0V V GS = - 2.5V 100 2345 -V GS (V) RDS(ON) (m ΩΩΩΩ) I D =-2.2A T C =25 ℃℃℃℃

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 25 50 75 100 125 150 T c , Case Temperature ( o C) -ID , Drain Current (A) 0.6 1.2 1.8 2.4 0 50 100 150 T c ,Case Temperature ( o C) PD (W) 0.01 0.1 100 0.1 1 10 100 -V DS (V) -ID (A) T C =25 o C Single Pulse 1ms 10ms 100ms 10s DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=90oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP2030SD 0.01 0.1 100 -V SD (V) -IS(A) T j =25 o C T j =150 o C 100 1000 10000 1 5 9 1 31 72 12 52 9 -V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0.2 0.4 0.6 0.8 -50 0 50 100 150 T j ,Junction Temperature ( o C) -VGS(th) (V) 0 2 4 6 8 10 12 14 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-2.2A V DS =-6V

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0.5 x RATED VDS TO THE OSCILLOSCOPE -4.5 V D G S VDS VGS RG RD 0.3 x RATED VDS TO THE OSCILLOSCOPED G S VDS VGS IDI G -1~-3mA