AP18T10GM-HF_14 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 100V ▼ Single Drive Requirement RDS(ON) 160mΩ ▼ Surface Mount Package ID 3A ▼ Halogen Free & RoHS Compliant Product

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance Junction-ambient 3 50 ℃/W Data and specifications subject to change without notice Halogen-Free Product AP18T10GM-HF 201004141 Parameter Rating Drain-Source Voltage 100 Gate-Source Voltage + 20 Continuous Drain Current3, VGS @ 10V 3 Continuous Drain Current3, VGS @ 10V 2.1 Pulsed Drain Current1 12 Total Power Dissipation 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Thermal Data Parameter Storage Temperature Range G D S S S S G D D D D SO-8 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 - - V VGS=10V, ID=3A - - 160 m Ω VGS=4.5V, ID=2A - - 225 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1-3 V gfs Forward Transconductance VDS=10V, ID=3A -4-S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V -- + 100 nA Qg Total Gate Charge2 ID=3A - 5.5 8.8 nC Qgs Gate-Source Charge VDS=50V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V -3- n C td(on) Turn-on Delay Time2 VDS=50V - 4.5 - ns tr Rise Time ID=1A -6- n s td(off) Turn-off Delay Time RG=3.3Ω -1 6-n s tf Fall Time VGS=10V - 5.5 - ns Ciss Input Capacitance VGS=0V - 400 640 pF Coss Output Capacitance VDS=25V -7 5-p F Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Rg Gate Resistance f=1.0MHz - 1.5 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.9A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=3A, VGS=0V, -4 0-n s Qrr Reverse Recovery Charge dI/dt=100A/µs - 70 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP18T10GM-HF RDS(ON) Static Drain-Source On-Resistance2

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G =4.0V T A =25 o C 0369 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 8.0V 7.0V 6.0V V G =5.0V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.3 0.8 1.3 1.8 2.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =3A V G =10V 100 120 140 160 180 200 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2A T A =25 o C 0.3 0.6 0.9 1.2 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 100 200 300 400 500 600 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss0 02468 1 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =3A V DS =50V 0.001 0.01 0.1 100 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125℃/W t T 0.02 td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)