AP18P10GI_14 A-POWER | Alldatasheet

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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower On-resistance BVDSS -100V ▼ Simple Drive Requirement RDS(ON) 160mΩ ▼ Fast Switching Characteristic ID -12A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ EAS mJ IAR A TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4.0 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data and specifications subject to change without notice 200901064 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V -55 to 150 Linear Derating Factor 31.25 -55 to 150 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Avalanche Current Single Pulse Avalanche Energy Continuous Drain Current, VGS @ 10V -10 Pulsed Drain Current1 -48 AP18P10GI Rating -100 +32 -12 0.25 RoHS-compliant Product G D S G D S TO-220CFM(I) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial- industrial through hole applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -100 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance3 VGS=-10V, ID=-8A - - 160 m Ω VGS=-4.5V, ID=-6A - - 200 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS= -10V, ID= -8A - 14 - S IDSS Drain-Source Leakage Current VDS=-100V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=125oC) VDS=-80V, VGS=0V - - -250 uA IGSS Gate-Source Leakage V GS= +32V, VDS=0V - - + 100 nA Qg Total Gate Charge3 ID=-8A - 16 25.6 nC Qgs Gate-Source Charge V DS=-80V - 4.4 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 8.7 - nC td(on) Turn-on Delay Time3 VDS=-50V - 9 - ns tr Rise Time I D=-8A - 14 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-10V - 45 - ns tf Fall Time R D=6.25Ω -4 0- ns Ciss Input Capacitance V GS=0V - 1590 2550 pF Coss Output Capacitance V DS=-25V - 110 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 8 12 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=-12A, VGS=0V - - -1.3 V trr Reverse Recovery Time3 IS=-8A, VGS=0V, - 49 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 110 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25oC , VDD=-50V , L=1.0mH , RG=25Ω. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 150 180 210 240 270 300 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =- 8A T C =25 ℃ 0 4 8 12 16 20 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =2 5o C -10V -7.0V -5.0V -4.5V V G = -3.0 V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -1 2A V G = -10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -10V -7.0V -5.0V -4.5V V G = -3.0V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP18P10GI Q VG -4.5V QGS QGD QG Charge 0 1 02 03 04 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) V DS = -8 0V I D = -8A 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 2.5 7.5 12.5 0246 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS = -5V