AP18N50W A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 500V ▼ Simple Drive Requirement RDS(ON) 0.27Ω ▼ Fast Switching Characteristic ID 20A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.833 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 40 ℃/W Data and specifications subject to change without notice Operating Junction Temperature Range -55 to 150 201104123 Thermal Data Parameter Storage Temperature Range Continuous Drain Current, VGS @ 10V 10 Pulsed Drain Current1 80 Total Power Dissipation 150 -55 to 150 Gate-Source Voltage ±30 Continuous Drain Current, VGS @ 10V 20 Parameter Rating Drain-Source Voltage 500 AP18N50W RoHS-compliant Product 200 G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-3P

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 500 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=10A - - 0.27 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=10A - 10 - S IDSS Drain-Source Leakage Current VDS=400V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge3 ID=20A - 94 150 nC Qgs Gate-Source Charge V DS=400V - 23 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 36 - nC td(on) Turn-on Delay Time3 VDD=200V - 113 - ns tr Rise Time I D=10A - 80 - ns td(off) Turn-off Delay Time R G=50Ω,VGS=10V - 525 - ns tf Fall Time R D=20Ω - 100 - ns Ciss Input Capacitance V GS=0V - 4600 7400 pF Coss Output Capacitance V DS=25V - 350 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=20A, VGS=0V - - 1.3 V trr Reverse Recovery Time3 IS=20A, VGS=0V - 490 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - uC Notes: 1.Pulse width limited by Max junction temperature. 2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP18N50W

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP18N50W V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 8.0 V 6.0V V G = 5.0V V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10 V 8.0 V 6.0V V G = 5.0 V 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =10A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) (V) 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP18N50W 100 0.1 1 10 100 1000 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =400V 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 10V QGS QGD QG Chargetd(on) tr td(off) tf VDS VGS 10% 90%