AP18N20GI-HF A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 200V ▼ Simple Drive Requirement RDS(ON) 170mΩ ▼ Fast Switching Characteristic ID 3 18A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.6 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data and specifications subject to change without notice 201412155 Thermal Data Parameter Operating Junction Temperature Range -55 to 150 Storage Temperature Range Total Power Dissipation 34.7 -55 to 150 Drain Current, V GS @ 10V3 9.5 Pulsed Drain Current1 60 Gate-Source Voltage + 20 Drain Current, VGS @ 10V3 Parameter Rating Drain-Source Voltage 200 AP18N20GI-HF Halogen-Free Product G D S G D S TO-220CFM(I) AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-220CFM package is widely preferred for all commercial- industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 200 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 170 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=10A - 9.5 - S IDSS Drain-Source Leakage Current VDS=200V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125oC) VDS=160V, VGS=0V - - 250 uA IGSS Gate-Source Leakage V GS=+20V , VDS=0V - - + 100 nA Qg Total Gate Charge I D=10A - 19 30 nC Qgs Gate-Source Charge V DS=160V - 5 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 6 - nC td(on) Turn-on Delay Time V DD=100V - 9 - ns tr Rise Time I D=11A - 21 - ns td(off) Turn-off Delay Time R G=9.1Ω -2 5 - ns tf Fall Time V GS=10V - 19 - ns Ciss Input Capacitance V GS=0V - 1065 1700 pF Coss Output Capacitance V DS=25V - 185 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 3 - pF Rg Gate Resistance f=1.0MHz - 1.6 3.2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=10A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=10A, VGS=0V - 180 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 1150 - nC Notes: 1.Pulse width limited by Max junction temperature. 2.Pulse test 3.Ensure that the junction temperature does not exceed TJmax.. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP18N20GI-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 16V 12 V 10 V 8.0V V G =6.0V 0.0 4.0 8.0 12.0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 16V 12 V 10 V 8.0V V G =6.0 V 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =8A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) 120 140 160 180 200 220 240 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T C =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 100 0.1 1 10 100 1000 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 4 8 12 16 20 24 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =10A 100 1000 10000 1 2 14 16 18 1 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 10V QGS QGD QG Charge 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V V DS = 100 V V DS = 130 V V DS = 160 V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 18N20GI YWWSSS meet Rohs requirement for low voltage MOSFET only