AP18N20AGS-HF A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 200V ▼ Simple Drive Requirement RDS(ON) 170mΩ ▼ Fast Switching Characteristic ID 18A ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation3 W TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W Rthj-a 40 ℃/W Data & specifications subject to change without notice Maximum Thermal Resistance, Junction-ambient (PCB mount)3 -55 to 150 Storage Temperature Range Parameter 9.5 -55 to 150 +20 Parameter 201011091 AP18N20AGS-HF Halogen-Free Product Rating 200 3.13 G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-263(S) The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 200 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 170 mΩ VGS=4.5V, ID=5A - - 180 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=8A - 25 - S IDSS Drain-Source Leakage Current VDS=200V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=8A - 18 29 nC Qgs Gate-Source Charge V DS=160V - 4.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 8.5 - nC td(on) Turn-on Delay Time2 VDD=100V - 8 - ns tr Rise Time I D=8A - 13 - ns td(off) Turn-off Delay Time R G=10Ω -7 2 - ns tf Fall Time V GS=10V - 37 - ns Ciss Input Capacitance V GS=0V - 1600 2560 pF Coss Output Capacitance V DS=25V - 200 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 5 - pF Rg Gate Resistance f=1.0MHz - 1.3 2.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=10A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=8A, VGS=0V - 160 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 1260 - nC Notes: 1.Pulse width limited by Maximum junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP18N20AGS-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 4 8 12 16 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 8.0V 7.0V 6.0V V G = 5.0V 0 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 120 122 124 126 128 130 132 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =8A T C =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =8A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 10V 8.0V 7.0V 6.0V V G =5.0V I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 400 800 1200 1600 2000 2400 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.1 100 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =8 A V DS =160V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 DUTY=0.5 SINGLE PULSE 0.2 td(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)