AP1801GU

AP1801GU A-POWER | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼▼▼▼ Capable of 2.5V gate drive BVDSS -20V ▼▼▼▼ Lower on-resistance RDS(ON) 70mΩ ▼▼▼▼ Surface mount package ID -4A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 78 ℃/W Data and specifications subject to change without notice AP1801GU Parameter Rating Pb Free Plating Product Drain-Source Voltage -20 Gate-Source Voltage ±12 Continuous Drain Current 3 -4 Continuous Drain Current3 -3.3 Pulsed Drain Current1,2 20 Total Power Dissipation 1.6 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.013 Storage Temperature Range Thermal Data Parameter 200111051 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2021-8 J-lead package provides good on-resistance performance and space saving like SC-70-6. G D S 2021-8 D D D D G S S S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - 0.01 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=-10V, ID=-4.8A - - 52 mΩ VGS=-4.5V, ID=-4A - - 70 mΩ VGS=-2.5V, ID=-2A - - 100 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -0.5 - -1.2 V gfs Forward Transconductance V DS=-5V, ID=-4A - 10 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-16V ,VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=±12V - - ±100 nA Qg Total Gate Charge2 ID=-4A - 11 18 nC Qgs Gate-Source Charge V DS=-16V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 4 - nC td(on) Turn-on Delay Time2 VDS=-10V - 10 - ns tr Rise Time I D=-1A - 16 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=-5V - 26 - ns tf Fall Time R D=10Ω -1 6- ns Ciss Input Capacitance V GS=0V - 740 1180 pF Coss Output Capacitance V DS=-20V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Rg Gate Resistance f=1.0MHz - 6.6 10 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage2 IS=-1.3A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=4A, VGS=0V, - 29 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 20 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 125 ℃/W at steady state. AP1801GU

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01234 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C - 5.0V - 4.5V - 3.5V - 2.5V V G = -1.5 V 01234 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -5.0V -4.5V -3.5V -2.5V V G = -1.5 V T A = 150o C 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =- 4A V G = - 4.5V 0.0 1.0 2.0 3.0 4.0 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) 02468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =- 2A T A =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP1801GU Q VG -4.5V QGS QGD QG Charge 0 5 10 15 20 25 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-4A V DS =-16V 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T A =25 o C Single Pulse 0246 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS =-5V 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125℃℃℃℃/W t T 0.02 100 1000 1 5 9 1 31 72 12 5 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss