AP1662_12 BCDSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 18

Technical content

Features

  • Comply with IEC61000-3-2 Standard
  • Proprietary Design for Minimum THD
  • Zero Current Detection Control for DCM Boundary Conduction Mode
  • Adjustable Output V oltage with Precise Over-voltage Protection
  • Low Start-up Current with 40 µA Typical Value
  • Low Quiescent Current with 2.5mA Typical Value
  • 1% Precision Internal Reference V oltage @ T J=25°C
  • Internal Start-up Timer
  • Disable Function for Reduced Current Consumption
  • Totem Pole Output with 600mA Source and 800mA Sink Current Capability
  • Under-voltage Lockout with 2.5V Hysteresis

Applications

  • Electronic Ballast
  • AC-DC Adapter
  • Off-line SMPS
  • Single Stage PFC LED Driver

Figure 1. Package Types of AP1662

Figure 2. Pin Configuration of AP1662 (Top View)

1 INV Inverting input of the error amplifier

2 COMP Output of the error amplifier

3 MULT Input of the multiplier

4 CS Input of the current control loop comparator

7 GD Gate driver output

8 VCC Supply voltage of gate driver and control circuits of the IC

Figure 3. Functional Block Diagram of AP1662

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

Ordering Information

C i r c u i t T y p e E1: Lead Free G 1 : G r e e n P a c k a g e Blank: Tube M : S O I C - 8 TR: Tape & Reel P: DIP-8 Package Temperature Range Part Number Marking ID Packing Type Lead Free Green Lead Free Green SOIC-8 -40 to 105°C AP1662M-E1 AP1662M-G1 1662M-E1 1662M-G1 Tube AP1662MTR-E1 AP1662MTR-G1 1662M-E1 1662M-G1 Tape & Reel DIP-8 -40 to 105°C AP1662P-E1 AP1662P-G1 AP1662P -E1 AP1662P-G1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with “G1” suffix are available in green packages.

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply V oltage V CC Self-limited V Operating Supply Current I CC 30 mA Input/Output of Error Amplifier, Input of Multiplier VINV, VCOMP, VMULT -0.3 to 7 V Current Sense Input V CS -0.3 to 7 V Zero Current Detector Input I ZCD Source -50 mA Sink 10 Power Dissipation and Thermal characteristics @ TA=50°C PTOT DIP-8 1 W SOIC-8 0.65 Thermal Resistance (Junction to Ambient) RθJA DIP-8 100 ºC/W SOIC-8 150 Operating Junction Temperature T J -40 to 150 ºC Storage Temperature Range T STG -65 to 150 ºC Lead Temperature (Soldering, 10 Seconds) TLEAD 260 ºC ESD (Human Body Model) V ESD(HBM) 3000 V ESD (Machine Model) V ESD(MM) 200 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under “Recommended Operating Co nditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

Electrical Characteristics

VCC =12V , TJ =-25°C to 125°C, CO=1nF, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Under Voltage Lockout Section Turn-on Threshold V CC-ON V CC Rising 11 12 13 V Turn-off Threshold V CC-OFF V CC Falling 8.7 9.5 10.3 V Hysteresis V CC-HYS 2.2 2.5 2.8 V VCC Operating Range V CC After turn-on 10.3 22 V Zener Voltage V Z ICC=20mA 22 24 V Total Supply Current Section Start-up Current I START-UP V CC=11V before turn-on 40 70 µA Operating Supply Current I CC Frequency=70kHz 3.5 5 mA In OVP condition VINV =2.7V 1.4 2.2 Quiescent Current I Q After turn on 2.5 3.75 mA Quiescent Current I Q VZCD≤150mV , VCC>VCC-OFF 2.2 mA VZCD≤150mV , VCC<VCC-OFF 20 50 90 µA Error Amplifier Section Voltage Feedback Input Threshold VINV TJ =25ºC 2.465 2.5 2.535 V 10.3V<VCC<20V 2.44 2.56 Line Regulation V CC=10.3V to 20V 2 5 mV Input Bias Current I INV V INV=0 to 3V -0.1 -1 µA Voltage Gain G V Open Loop 60 80 dB Gain Bandwidth G B 1 MHz Output Voltage Upper Clamp Voltage VCOMP-H I SOURCE=0.5mA 5.15 5.55 5.85 V Lower Clamp Voltage VCOMP-L I SINK=0.5mA 2.1 2.25 2.4 Output Current Source Current ICOMP-H V COMP=4V, VINV =2.4V -2 -4 -8 mA Sink Current I COMP-L V COMP=4V, VINV=2.6V 2.5 4.5

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) VCC =12V , TJ =-25°C to 125°C, CO=1nF, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Multiplier Section Linear Input Voltage Range VMULT 0 to 3 0 to 3.5 V Output Maximum Slope △ VCS/ △VMULT VMULT: 0 to 0.5V, VCOMP=Upper Clamp Voltage 1.65 1.9 Gain k V MULT=1V, VCOMP=4V 0.6 0.75 0.9 1/V Current Sense Section Input Bias Current I CS V CS=0V -1 µA Current Sense Offset Voltage VCS-OFFSET VMULT=0V 30 mV VMULT=2.5V 5 Current Sense Reference Clamp VCS-CLAMP VCOMP = Upper Clamp Voltage, VMULT = 2.5V 1.6 1.7 1.8 V Delay to Output t d(H-L) 200 350 ns Zero Current Detection Section Arming Voltage (positive-going edge) VZCDA (Note 2) 2.1 V Triggering Voltage (negative-going edge) VZCDT (Note 2) 1.6 V Upper Clamp Voltage V ZCD-H IZCD=20µA 4.5 5.1 5.9 V IZCD=3mA 4.7 5.2 6.1 Lower Clamp Voltage VZCD-L I ZCD= -3mA 0.3 0.65 1 V Source Current Capability IZCD-SR -2.5 -10 mA Sink Current Capability IZCD-SN 3 mA Sink Bias Current I ZCD-B 1V ≤ VZCD ≤ 4.5 V 2 µA Disable Threshold V ZCD-DIS 150 200 250 mV Disable Hysteresis V ZCD-HYS 100 mV Restart Current After Disable IZCD-RES V ZCD<VDIS, VCC>VCC-OFF -80 -120 µA Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) VCC =12V , TJ =-25°C to 125°C, CO=1nF, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Drive Output Section Dropout Voltage VOH IGD-SOURCE=200mA 2.5 3 V IGD-SOURCE=20mA 2 2.8 VOL I GD-SINK=200mA 0.9 1.9 Output Voltage Rise Time tR 40 80 ns Output Voltage Fall Time t F 30 70 ns Output Clamp Voltage V O-CLAMP IGD-SOURCE=5mA VCC=20V 9 11 13 V UVLO Saturation V OS VCC=0 to VCC-ON, ISINK=10mA 1.1 V Output Over Voltage Section OVP Triggering Current I OVP 35 40 45 µA Static OVP Threshold V OVP_TH 2.1 2.25 2.4 V Starter Start Timer Period t START 75 130 300 µs

Figure 20. Gate-driver Clamp vs. TJ Figure 21. UVLO Saturation vs. TJ

is decided by the output of multiplier. The error amplifier regulates the PFC output voltage. between INV and the error amplifier output. Figure 22. Error Amplifier and OVP Block

reduce the IC supply current consumption. Figure 23. 85 to 265V Wide Range Input 90W PFC Demo Board Electrical Schematic Circuit

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Mechanical Dimensions S O I C - 8 U n i t : m m ( i n c h ) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) Note: Eject hole, oriented hole and mold mark is optional.

HIGH PERFORMANCE POWER FACTOR CORRECTOR AP1662 Jul. 2012 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) D I P - 8 U n i t : m m ( i n c h ) R0.750(0.030) 0.254(0.010)TYP 0.130(0.005)MIN 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)TYP 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)MIN Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 1.524(0.060) TYP Note: Eject hole, oriented hole and mold mark is optional.

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277