AP1661 BCDSEMI | Alldatasheet
Document overview
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Technical content
Features
- Zero Current Detection Control for DCM Bound- ary Conduction Mode
- Adjustable Output V oltage with Precise Over- V oltage Protection
- Low Start-up Current with 50 μA Typical Value
- Low Operating Supply Current with 4mA Typical Val ue
- 1% Precision Internal Reference V oltage
- Internal Start-up Timer
- Disable Function for Reduced Current Consumption
- Totem Pole Output with 600mA Source Current and 800mA Sink Current Capability
- Under-V oltage Lockout with 2.5V of Hysteresis
Applications
- AC-DC Adapter
- Off-line SMPS
- Electronic Ballast
Figure 1. Package Types of AP1661
1 INV Inverting input of the error amplifier
2 COMP Output of the error amplifier
3 MULT Input of the multiplier
4 CS Input of the current control loop comparator
7 GD Gate driver output
8 VCC Supply voltage of gate driver and control circuits of the IC
Figure 2. Pin Configuration of AP1661 (Top View)
POWER FACTOR CORRECTION CONTROLLER AP1661 Data Sheet Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Functional Block Diagram Figure 3. Functional Block Diagram of AP1661
Ordering Information
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Circuit Type Package M: SOIC-8 G1: Green AP1661 - TR: Tape and Reel Blank: Tube P: DIP-8 Package Temperature Range Part Number Marking ID Packing Type Lead Free Green Lead Free Green SOIC-8 -40 to 85oC AP1661M-E1 AP1661M-G1 1661M-E1 1661M-G1 Tube AP1661MTR-E1 AP1661MTR-G1 1661M-E1 1661M-G1 Tape & Reel DIP-8 -40 to 85oC AP1661P-E1 AP1661P-G1 AP1661P-E1 AP1661P-G1 Tube INV VCC Multiplier Overvoltage Detection Voltage Regulation Starter DisableEnable Driver R S QInternal Supply 7.5V22V 2.1V 1.6V Vref COMP MULT CS GD GNDZCD Zero Current Detector 5 6 432 13V VCC E1: Lead Free
POWER FACTOR CORRECTION CONTROLLER AP1661 Data Sheet Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply V oltage V CC 20 V Operating Supply Current ICC 30 mA Driver Output Current IOUT ±800 mA Input/Output of Error Amplifier, Input of Multiplier VINV, VCOMP, VMULT -0.3 to 7 V Current Sense Input VCS -0.3 to 7 V Zero Current Detector Input IZCD Source -50 mA Sink 10 Thermal Resistance Junction-Ambient RθJA DIP-8 100 oC/WSOIC-8 150 Power Dissipation and Thermal Charac- teristics @ TA=50oC PTOT DIP-8 1 W SOIC-8 0.65 Operating Junction Temperature TJ -40 to150 oC Storage Temperature Range TSTG -65 to 150 oC Lead Temperature (Soldering, 10 Seconds) TLEAD 260 oC ESD (Human Body Model) 3000 V ESD (Machine Model) 300 V Note 1: Stresses greater than those listed under "A bsolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max- imum Ratings" for extended periods may affect device reliability.
POWER FACTOR CORRECTION CONTROLLER AP1661 Data Sheet Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Parameter Symbol Test Conditions Min Typ Max Unit Under Voltage Lockout Section Turn-on Threshold V CC-ON VCC rising 11 12 13 V Turn-off Threshold V CC-OFF VCC falling 8.7 9.5 10.3 V Hysterisis V CC-HYS 2.2 2.5 2.8 V VCC Operating Range V CC After turn-on 10.3 20 V Total Supply Section Start-up Current I START-UP VCC=11V before turn-on 20 50 90 μA Operating Supply Current ICC CL=1nF @frequency=70KHz 4 5.5 mA In OVP condition Vpin1=2.7V 1.4 2.1 Quiescent Current I Q 2.6 4 mA Quiescent Current IQ Vpin5≤150mV , VCC>VCC-OFF 1.4 2.1 mA Vpin5≤150mV , VCC<VCC-OFF 20 50 90 μA VCC Zener V oltage V Z ICC= 2 0 m A 2 02 22 4 V Error Amplifier Section V oltage Feedback Input Threshold VINV TA=25 oC 2.465 2.5 2.535 V 10.3V<VCC<20V 2.44 2.56 Line Regulation V CC=10.3V to 20V 2 5 mV Input Bias Current I INV VINV=0V -0.1 -1 μA V oltage Gain G V Open Loop 60 80 dB Gain Bandwidth GB 1 MHz Output V oltage Upper Clamp V oltage VCOMP-H ISOURCE=0.5mA 5.8 V Lower Clamp V oltage VCOMP-L ISINK=0.5mA 2.25 Output Current Source Current I COMP-H VCOMP=4V , VINV= 2 . 4 V - 2- 4- 8 mA Sink Current ICOMP-L VCOMP=4V , VINV=2.6V 2.5 4.5 Enable Threshold V INV-TH 720 mV Multiplier Section Linear Input V oltage Range V MULT 0 to 3 0 to 3.5 V Output Maximum Slope ΔVCS/ ΔVMULT VMULT: 0 to 0.5V , VCOMP=Upper Clamp V oltage 1.7 Gain k V MULT=1V , VCOMP=4V 0.45 0.6 0.75 1/V
Electrical Characteristics
VCC=14.5V , TA=-25oC to 125oC, unless otherwise specified.
POWER FACTOR CORRECTION CONTROLLER AP1661 Data Sheet Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Parameter Symbol Test Conditions Min Typ Max Unit Current Sense Section Input Bias Current I CS VCS =0V -0.05 -1.0 μA Current Sense Offset V olt- age VCS-OFFSET VMULT=0V 30 mV VMULT=2.5V 5 Current Sense Reference Clamp VCS-CLAMP VCOMP=Upper Clamp V oltage, VMULT=2.5V 1.6 1.7 1.8 V Delay to Output t d(H-L) 200 450 ns Zero Current Detection Section Input Threshold V oltage, VZCD Rising Edge VZCD-R (Note 2) 2.1 V Hysteresis V oltage V ZCD-RTH (Note 2) 0.3 0.5 0.7 V Upper Clamp V oltage VZCD-H IZCD=20μA 4.5 5.1 5.9 V IZCD=3mA 4.7 5.2 6.1 Lower Clamp V oltage V ZCD-L IZCD=-3mA 0.3 0.65 1 V Source Current Capability I ZCD-SR -3 -10 mA Sink Current Capability I ZCD-SN 31 0 m A Sink Bias Current I ZCD-B 1V≤VZCD≤4.5 V 2 μA Disable Threshold V ZCD-DIS 150 200 250 mV Disable Hysterisis V ZCD-HYS 100 mV Restart Current After Disable I ZCD-RES VZCD<VDIS; VCC>VCC-OFF -100 -200 -300 μA Drive Output Section Dropout V oltage VOH IGD-SOURCE=200 mA, VCC=12V 2.5 3 V IGD-SOURCE=20 mA, VCC=12V 2 2.6 VOL IGD-SINK=200 mA, VCC=12V 0.9 1.9 V Output V oltage Rise Time t R CL=1nF 40 100 ns Output V oltage Fall Time t F CL=1nF 40 100 ns Output Clamp V oltage V O-CLAMP IGD-SOURCE=5 mA, VCC=20V 10 13 15 V UVLO Saturation V OS VCC=0 to VCC-ON, ISINK=10mA 1.1 V Output Over Voltage Section OVP Triggering Current I OVP 35 40 45 μA Static OVP Threshold V OVP_TH 2 . 12 . 2 52 . 4 V Restart Timer Restart Timer t START 70 150 400 μs Electrical Characteristics (Continued) VCC=14.5V , TA=-25oC to 125oC, unless otherwise specified. Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
The error amplifier regulates the PFC output voltage. high power factor for PFC converter. current flowing into the error amplifier output pin.
- The relationship between the multiplier output and
inputs is described as below equation. or abnormal conditions such as short load. Figure 11. Error Amplifier and OVP Block
Figure 12. 85 to 265V Wide Range Input 90W PFC Demo Board Electrical Schematic Circuit
POWER FACTOR CORRECTION CONTROLLER AP1661 Data Sheet Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Mechanical Dimensions DIP-8 Unit: mm(inch) R0.750(0.030) 0.254(0.010)TYP 0.130(0.005)MIN 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)TYP 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)MIN Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 1.524(0.060) TYP
POWER FACTOR CORRECTION CONTROLLER AP1661 Data Sheet Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) φ
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800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen, 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277