AP1430GEU6-HF

AP1430GEU6-HF A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Gate Drive BVDSS 60V ▼ Small Package Outline RDS(ON) 2.5Ω ▼ Embedded Protection Diode ID 230mA ▼ RoHS Compliant & Halogen Free

Description

ID@TA=25℃ mA ID@TA=70℃ mA IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 450 ℃/W Data and specifications subject to change without notice -55 to 150 201205221 Halogen-Free Product AP1430GEU6-HF 0.277 Parameter Rating Drain-Source Voltage 60 Gate-Source Voltage + Continuous Drain Current, VGS @ 10V3 230 Parameter Operating Junction Temperature Range Continuous Drain Current, VGS @ 10V3 190 Pulsed Drain Current1 1 Total Power Dissipation Storage Temperature Range -55 to 150 Thermal Data Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. SOT-363 package is ultra-small surface mount package and lead free RoHS compliant. SOT-363

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=230mA - - 2.5 Ω VGS=4.5V, ID=150mA - - 4 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance2 VDS=10V, ID=300mA - 0.6 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=300mA - 1 1.6 nC Qgs Gate-Source Charge V DS=30V - 0.4 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 0.3 - nC td(on) Turn-on Delay Time V DS=30V - 11 - ns tr Rise Time I D=300mA - 7 - ns td(off) Turn-off Delay Time R G=3.3Ω -6 2- ns tf Fall Time V GS=10V - 30 - ns Ciss Input Capacitance V GS=0V - 35 56 pF Coss Output Capacitance V DS=25V - 9 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6.5 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=210mA, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 800℃/W when mounted on min. copper pad. AP1430GEU6-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.4 0.8 1.2 1.6 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6 .0V 5.0 V V G = 4 .0V 0.4 0.8 1.2 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 60 V 5.0 V V G = 4 .0V 0.4 0.8 1.2 1.6 2.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = 230m A V G =10V 1.4 1.5 1.6 1.7 1.8 1.9 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (Ω) I D = 150m A T A =25 o C 0.1 0.2 0.3 0.4 0.5 V SD , Source-to-Drain Voltage (V) IS (A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =0.3A V DS =30V 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 800℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 0.2 0.3 0.4 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A) Operation in this area limited by RDS(ON) 0.2 0.4 0.6 0.8 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j =-40 o C