AP12L02H A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS 25V ▼ ▼ ▼ ▼ Low Gate Charge RDS(ON) 85mΩ ▼ ▼ ▼ ▼ Fast Switching ID 12A

Description

ID@TA=25℃ A ID@TA=100℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 6.2 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 20 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.16 Continuous Drain Current, VGS @ 10V 9 Pulsed Drain Current1 22 Gate-Source Voltage ± 20 Continuous Drain Current, VGS @ 10V 12 Parameter Rating Drain-Source Voltage 25 200110031 AP12L02H/J G D S TO-252(H) G D S TO-251(J) G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP12L02J) are available for low-profile applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 25 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.024 -V / ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=6A - - 85 mΩ VGS=4.5V, ID=4A - - 180 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=6A - 5.2 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=20V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS= ± 20V - - ±100 nA Qg Total Gate Charge2 ID=6A - 3.5 - nC Qgs Gate-Source Charge V DS=20V - 1 - nC Qgd Gate-Drain ("Miller") Charge V GS=5V - 2.3 - nC td(on) Turn-on Delay Time2 VDS=15V - 4.8 - ns tr Rise Time I D=6A - 15.9 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 10.4 - ns tf Fall Time R D=2.5Ω - 2.7 - ns Ciss Input Capacitance V GS=0V - 105 - pF Coss Output Capacitance V DS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 30 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 12 A ISM Pulsed Source Current ( Body Diode )1 -- 2 2 A VSD Forward On Voltage2 Tj=25℃, IS=12A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP12L02H/J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 8.0V 6.0V 5.0V V GS =4.5V V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8.0V 6.0V 5.0V V GS =4.5V 0.2 0.8 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =6A V GS =10V 130 180 2 6 10 14 V GS (V) RDS(ON) (m ΩΩΩΩ) I D =6A T C =25 ℃℃℃℃

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP12L02H/J 0.1 100 0.1 1 10 100 V DS (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A) 0 50 100 150 T c , Case Temperature ( o C) PD (W) 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 1.5 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 02468 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =6A V DS =12V V DS =16V V DS =20V 100 1000 1 8 15 22 29 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0.1 100 0 0.5 1 1.5 V SD (V) IS(A) Tj=25 o CTj=150 o C

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.8 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS I D I G 1~ 3 mA 0.6 x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD