AP1001BSQ

AP1001BSQ A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lead-Free Package BVDSS 30V ▼ Low Conductance Loss RDS(ON) 6mΩ ▼ Low Profile ( < 0.7mm ) ID 15A

Description

ID@TA=25℃ A ID@TA=100℃ A ID@TC=25℃ A IDM A PD@TA=25℃ W PD@TA=70℃ W PD@TC=25℃ W EAS mJ IAR A TSTG ℃ TJ ℃ Rthj-c Maximum Thermal Resistance, Junction-case 4 3.7 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 58 ℃/W Data and specifications subject to change without notice Continuous Drain Current, VGS @ 10V4 -40 to 150 Halogen-Free Product Single Pulse Avalanche Energy5 Operating Junction Temperature Range Total Power Dissipation4 Avalanche Current Continuous Drain Current, VGS @ 10V3 Pulsed Drain Current1 120 Total Power Dissipation3 Thermal Data Storage Temperature Range Total Power Dissipation3 1.4 Gate-Source Voltage + 20 Continuous Drain Current, VGS @ 10V3 Parameter Rating Drain-Source Voltage 30 AP1001BSQ 28.8 2.2 -40 to 150 201106013 G D S The AP1001BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. The GreenFET TM package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters. GreenFETTM SQ GD DS

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=15A - 4.5 6 m Ω VGS=4.5V, ID=12A - 7.4 10 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 2.5 V gfs Forward Transconductance V DS=10V, ID=12A 12 22 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=125oC) VDS=20V ,VGS=0V - - 150 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=12A - 9 14.4 nC Qgs Gate-Source Charge V DS=13V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 5 - nC td(on) Turn-on Delay Time2 VDS=13V - 9 - ns tr Rise Time I D=12A - 55 - ns td(off) Turn-off Delay Time R G= 3.3 Ω,VGS= 10 V - 20 - ns tf Fall Time R D= 1.08 Ω - 5.6 - ns Input Capacitance V GS=0V - 810 1300 pF Coss Output Capacitance V DS=25V - 295 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 150 - pF Rg Gate Resistance f=1.0MHz - 2 3.2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) - - 2.7 A ISM Pulsed Source Current ( Body Diode )1 - - 120 A VSD Forward On Voltage2 IS=12A, VGS=0V - - 1 V trr Reverse Recovery Time I S=12A, VGS=0V, - 28 42 ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 20 30 nC Notes: 1.Pulse width limited by Max junction temperature. 2.Pulse test 4.TC measured with thermocouple mounted to top (Drain) of part. 5.Starting Tj=25oC , L=0.1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP1001BSQ 3.Surface mounted on 1 in2 copper pad of FR4 board.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 100 120 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G =4.0V 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =15A V G =10V 0 0.5 1 1.5 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =12A T A =25 o C 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 100 1000 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC Rthja = 58℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 4 8 12 16 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =12A V DS =13V V DS =16V V DS =20V 200 400 600 800 1000 1200 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 4.5V QGS QGD QG Chargetd(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)