AP09T10GK-HF_14 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼▼ ▼▼ Simple Drive Requirement BV DSS 100V ▼▼ ▼▼ Lower Gate Charge R DS(ON) 300m Ω ▼▼ ▼▼ Fast Switching Characteristic ID 2.1A ▼▼ ▼▼ Halogen Free & RoHS Compliant Product

Description

ID @T A=25 ℃ A ID @T A=70 ℃ A IDM A PD @T A=25 ℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-a Maximum Thermal Resistance, Junction-ambient 3 45 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 Total Power Dissipation 2.78 Continuous Drain Current 3, V GS @ 10V 1.7 Pulsed Drain Current 1 8 Gate-Source Voltage +20 Continuous Drain Current 3, V GS @ 10V 2.1 Parameter Rating Drain-Source Voltage 100 AP09T10GK-HF Halogen-Free Product 201109061 G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on- resistance and cost-effectiveness. D D S GSOT-223 The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package.

Electrical Characteristics@T j=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage VGS =0V, I D =250uA 100 - - V R DS(ON) Static Drain-Source On-Resistance 2 VGS =10V, I D =2A - - 300 m Ω VGS =4.5V, I D =1A - - 600 m Ω VGS(th) Gate Threshold Voltage V DS =V GS , I D =250uA 1 - 3 V gfs Forward Transconductance V DS =10V, I D =2A - 2 - S IDSS Drain-Source Leakage Current VDS =80V, V GS =0V - - 25 uA IGSS Gate-Source Leakage V GS =+20V, V DS =0V - - + 100 nA Q g Total Gate Charge I D =2A - 5 8 nC Q gs Gate-Source Charge V DS =50V - 1.1 - nC Q gd Gate-Drain ("Miller") Charge V GS =10V - 1.7 - nC td(on) Turn-on Delay Time V DS =50V - 6 - ns tr Rise Time I D =1A - 7 - ns td(off) Turn-off Delay Time R G =3.3 Ω - 10 - ns tf Fall Time V GS =10V - 4 - ns C iss Input Capacitance V GS =0V - 190 300 pF C oss Output Capacitance V DS =15V - 32 - pF C rss Reverse Transfer Capacitance f=1.0MHz - 22 - pF R g Gate Resistance f=1.0MHz 1 2 4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=2A, V GS =0V - - 1.3 V trr Reverse Recovery Time I S=2A, V GS =0 V, - 29 - ns Q rr Reverse Recovery Charge dI/dt=100A/µs - 39 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARG E, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED . APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF T HE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DES CRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER IT S PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FUR THER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP09T10GK-HF 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0 2 4 6 8 10 12 14 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized R DS(ON) ID =2A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j=25 o CT j=150 o C 200 300 400 500 600 2 4 6 8 10 V GS Gate-to-Source Voltage (V) R DS(ON) (m ΩΩΩΩ) ID =1A T A =25 o C 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized V GS(th) (V) ID =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 0 1 2 3 4 5 6 Q G , Total Gate Charge (nC) V GS , Gate to Source Voltage (V) V DS = 50 V ID = 2 A 100 200 300 400 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja ) PDM Duty factor = t/T Peak T j = P DM x R thja + T a R thja = 120 ℃℃ ℃℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by R DS(ON) 0 1 2 3 4 5 6 7 8 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j=150 o C T j=25 o C V DS =5V 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) ID , Drain Current (A)