AP09N90CW-HF A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Minimize On-resistance BVDSS 900V ▼ Fast Switching RDS(ON) 1.4Ω ▼ Simple Drive Requirement ID 7.6A ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 0.6 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 40 ℃/W Data & specifications subject to change without notice 4.8 120 Linear Derating Factor 1.6 208 7.6 AP09N90CW-HF +30 Parameter Rating 900 200912163 Halogen-Free Product Storage Temperature Range -55 to 150 -55 to 150 Parameter G D S G D S TO-3P AP09N90C provides minimize on-state resistance , superior switching performance and high efficiency switching power supply applications. TO-3P package is preferred for commercial-industrial applications and provides greater distance between pins to meet the requirements of most safety specifications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 900 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.74 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=3.6A - 1.25 1.4 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=3.6A - 3.6 - S IDSS Drain-Source Leakage Current VDS=900V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125oC) VDS=720V, VGS=0V - - 500 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge3 ID=7.2A - 50.7 80 nC Qgs Gate-Source Charge V DS=540V - 12 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 16 - nC td(on) Turn-on Delay Time3 VDD=450V - 20 - ns tr Rise Time I D=7.2A - 16 - ns td(off) Turn-off Delay Time R G=6.8Ω,VGS=10V - 65 - ns tf Fall Time R D=62.5Ω -2 7- ns Ciss Input Capacitance V GS=0V - 3097 5000 pF Coss Output Capacitance V DS=15V - 516 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 19 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=7.2A, VGS=0V - - 1.5 A trr Reverse Recovery Time 3 IS=7.2A, VGS=0V, - 673 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9.6 - µC Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting T j=25oC , VDD=50V , L=6.8mH , RG=25Ω , IAS=6A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. RELIABILITY, FUNCTION OR DESIGN. AP09N90CW-HF APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.1 100 V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o CT j = 25 o C -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V) 02468 1 0 1 2 1 4 1 6 1 8 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =4.0V 10V 7.0V 5.0V 4.5V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =3.6A 0.8 0.9 1.1 1.2 -50 0 50 100 150 Junction Temperature ( o C) Normalized BVDSS (V) 02468 1 0 1 2 1 4 1 6 1 8 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) V G =4.0V 4.5V 10V 7.0V 5.0V T C =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0 2 04 06 08 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =180V V DS =360V V DS =540V I D =7.2A 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss 0.1 100 1 10 100 1000 10000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse