AP09N70P-H

AP09N70P-H_14 A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Rated BVDSS 700V ▼ Fast Switching Characteristics RDS(ON) 0.85Ω ▼ Simple Drive Requirement ID 8.3A

Description

ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 0.8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data & specifications subject to change without notice AP09N70P/R-H +30 Rating 700 RoHS-compliant Product Parameter 8.3 156 5.2 200912283 Storage Temperature Range -55 to 150 Drain-Source Voltage -55 to 150 Parameter G D S AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G DS TO-220(P) G DS TO-262(R) The TO-220 and TO-262 package is widely preferred for all commercial- industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 700 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=4A - - 0.85 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=4.5A - 4.5 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 25 uA Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V - - 500 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge3 ID=9A - 44 - nC Qgs Gate-Source Charge V DS=480V - 11 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 12 - nC td(on) Turn-on Delay Time3 VDD=300V - 19 - ns tr Rise Time I D=9A - 21 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 56 - ns tf Fall Time R D=34Ω -2 4- ns Ciss Input Capacitance V GS=0V - 2660 - pF Coss Output Capacitance V DS=25V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 8.3 A ISM Pulsed Source Current ( Body Diode )1 -- 4 0 A VSD Forward On Voltage3 Tj=25℃, IS=9A, VGS=0V - - 1.5 V Notes: 1.Pulse width limited by Maximum junction temperature. 2.Starting T j=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=8A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP09N70P/R-H

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP09N70P/R-H 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) 0369 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 6.0V 5.0V 4.5V 4.0V V G = 3 .5 V -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =4A V G =10V 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 6.0V 5.0V 4.5V 4.0V V G = 3 .5 V 0.1 100 V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o C T j = 25 o C -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1 10 100 1000 10000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 2 04 06 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =9A V DS =320V V DS =400V V DS =480V 100 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge Operation in this area limited by RDS(ON)