AP09N70P A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Dynamic dv/dt Rating BVDSS 600/675V ▼ Repetitive Avalanche Rated RDS(ON) 0.75Ω ▼ Fast Switching ID ▼ Simple Drive Requirement

Description

V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG TJ Operating Junction Temperature Range Thermal Data Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 0.8 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. ℃/W Data & specifications subject to change without notice AP09N70P/R Rating 156 305 1.25 -55 to 150 Parameter 200218032 Parameter Linear Derating Factor - /A Storage Temperature Range -55 to 150 AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220 and TO-262 package is universally preferred for all commercial- industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. G D S ± 30 G DS TO-262(R) G D S TO-220(P) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA / - 600 V VGS=0V, ID=1mA / A 675 V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA 0.6 V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4.5A 0.75 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA V gfs Forward Transconductance VDS=10V, ID=4.5A 4.5 S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V uA Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V 100 uA IGSS Gate-Source Leakage VGS= nA Qg Total Gate Charge3 ID=9A nC Qgs Gate-Source Charge VDS=480V nC Qgd Gate-Drain ("Miller") Charge VGS=10V nC td(on) Turn-on Delay Time3 VDD=300V ns tr Rise Time ID=9A ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V ns tf Fall Time RD=34Ω ns Ciss Input Capacitance VGS=0V 2660 pF Coss Output Capacitance VDS=25V 170 pF Crss Reverse Transfer Capacitance f=1.0MHz pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V A ISM Pulsed Source Current ( Body Diode )1 A VSD Forward On Voltage3 Tj=25℃, IS=9A, VGS=0V 1.5 V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=6.8mH , RG=25Ω , IAS=9A. 3.Pulse width <300us , duty cycle <2%. Ordering Code AP09N70P(/R)- X : X Denote BVDSS Grade Blank = BVDSS 600V A = BVDSS 675V AP09N70P/R ±100 ± 30V

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature AP09N70P/R 0.8 0.9 1.1 1.2 -50 100 150 T j , Junction Temperature ( oC) Normalized BVDSS (V) V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C=25 oC V G=6.0V V G=5.0V V G=4.5V V G=4.0V V G=3.5V V G=10V 0.4 0.8 1.2 1.6 2.4 2.8 -50 100 150 T j , Junction Temperature ( oC ) Normalized RDS(ON) V G=10V I D=4.5A V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C=150 oC V G=6.0V V G=5.0V V G=4.5V V G=4.0V V G=3.5V V G=10V

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP09N70P/R 100 125 150 T c , Case Temperature ( C) ID , Drain Current (A) 100 150 100 150 Tc , Case Temperature( oC) PD (W) 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE 0.1 100 100 1000 10000 V DS (V) ID (A) T c=25 oC Single Pulse 10us 100us 1ms 10ms 100ms

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP09N70P/R -50 100 150 T j , Junction Temperature ( oC) VGS(th) (V) Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D=9A V DS=320V V DS=400V V DS=480V 100 10000 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss 0.1 100 0.2 0.4 0.6 0.8 1.2 1.4 1.6 V SD (V) IS (A) T j = 150 oC T j = 25 oC

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS ID IG 1~ 3 mA