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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 650V ▼ Fast Switching Characteristic RDS(ON) 0.75Ω ▼ Simple Drive Requirement ID 9A ▼ RoHS Compliant & Halogen-Free

Description

ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy2 mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 0.8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data & specifications subject to change without notice AP09N70P-A-HF +30 Rating 650 Halogen-Free Product -55 to 150 156 40.5 -55 to 150 201310025 Parameter Storage Temperature Range Drain-Source Voltage Parameter G D S G D S TO-220 AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 650 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=4.5A - - 0.75 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=4.5A - 4.5 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge3 ID=9A - 44 - nC Qgs Gate-Source Charge V DS=480V - 11 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 12 - nC td(on) Turn-on Delay Time3 VDD=300V - 19 - ns tr Rise Time I D=9A - 21 - ns td(off) Turn-off Delay Time R G=10Ω -5 6- ns tf Fall Time V GS=10V - 24 - ns Ciss Input Capacitance V GS=0V - 2660 - pF Coss Output Capacitance V DS=25V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 9 A ISM Pulsed Source Current ( Body Diode )1 -- 4 0 A VSD Forward On Voltage3 Tj=25℃, IS=9A, VGS=0V - - 1.5 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting T j=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=9A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP09N70P-A-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP09N70P-A-HF 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS 0369 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 6.0V 5.0V 4.5V 4.0V V G = 3 .5 V -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =4.5A V G =10V 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 6.0V 5.0V 4.5V 4.0V V G = 3 .5 V 0.1 100 V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o C T j = 25 o C -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1 10 100 1000 10000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 02 0 4 0 6 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =9A V DS =320V V DS =400V V DS =480V 100 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge