AP09N20H-HF

AP09N20H-HF A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 200V ▼ Low On-resistance RDS(ON) 380mΩ ▼ Fast Switching Characteristics ID 8.6A ▼ RoHS Compliant

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice 200809112 Halogen-Free Product AP09N20H/J-HF -55 to 150 Parameter 8.6 +30 8.6 5.5 Parameter Rating 200 Storage Temperature Range -55 to 150 Linear Derating Factor 0.55 G D S TO-251(J) G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP09N20J) is available for low-profile applications. G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 200 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.24 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=5A - - 380 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=5A - 3.7 - S IDSS Drain-Source Leakage Current VDS=200V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=160V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS= +30V - - + 100 nA Qg Total Gate Charge3 ID=8.6A - 23 37 nC Qgs Gate-Source Charge V DS=160V - 4 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 13 - nC td(on) Turn-on Delay Time3 VDD=100V - 12 - ns tr Rise Time I D=8.6A - 25 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 36 - ns tf Fall Time R D=11.6Ω -1 6- ns Ciss Input Capacitance V GS=0V - 500 800 pF Coss Output Capacitance V DS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=8.6A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=8.6A, VGS=0V, - 225 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 2260 - nC Notes: 1.Pulse width limited by safe operating area. 2.Starting T j=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=8.6A. 3.Pulse width <300us , duty cycle <2%. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP09N20H/J-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.6 0.8 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) 0.4 0.8 1.2 1.6 2.4 2.8 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =5A V GS =10V 02468 1 0 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8.0V 7.0V 5.0V V G =4.0V 02468 1 0 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 8.0V 7.0V V G =4.0V 5.0V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 100 1000 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 6 12 18 24 30 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =100V V DS =120V V DS =160V I D =8.6A 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC

Package Outline : TO-252 Millimeters MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 F 2.20 2.63 3.05 F1 0.50 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-252 SYMBOLS ADVANCED POWER ELECTRONICS CORP. ee D FB1 F1 A3 C R : 0.127~0.381 (0.1mm Part Package Code 09N20H YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product LOGO

Package Outline : TO-251 MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.40 0.60 0.80 B2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 4.80 5.20 5.50 E 6.70 7.00 7.30 E1 5.40 5.60 5.80 E2 1.30 1.50 1.70 e ---- 2.30 ---- F 7.00 8.30 9.60 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-251 SYMBOLS ADVANCED POWER ELECTRONICS CORP. Millimeters 09N20J YWWSSS Part Number Package Code A c e D E1 E F e Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product LOGO