AP0904GJB-HF

AP0904GJB-HF_16 A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 40V ▼ Simple Drive Requirement RDS(ON) 10mΩ ▼ Fast Switching Characteristic ID 51A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.8 ℃/W Rthj-a Maixmum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Parameter 201501092 Total Power Dissipation Gate-Source Voltage + 20 Drain Current, VGS @ 10V 51 Drain Current, VGS @ 10V 32 Pulsed Drain Current1 Parameter Rating Drain-Source Voltage 40 AP0904GJB-HF 44.6 200 Halogen-Free Product The TO-251S short lead package is preferred for all commercial- industrial through-hole applications without lead-cutted. G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. TO-251S(JB) GDS

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 40 - - V VGS=10V, ID=30A - - 10 m Ω VGS=4.5V, ID=20A - - 15 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=20A - 45 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=20A - 9 14.4 nC Qgs Gate-Source Charge V DS=20V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 6 - nC td(on) Turn-on Delay Time V DS=20V - 6.5 - ns tr Rise Time I D=1A - 6.5 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 0- ns tf Fall Time V GS=10V - 10 - ns Ciss Input Capacitance V GS=0V - 680 1080 pF Coss Output Capacitance V DS=25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=10A, VGS=0V, - 22 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP0904GJB-HF RDS(ON) Static Drain-Source On-Resistance2

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 100 120 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =30A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =20A T C =25 o C 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 4 8 12 16 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =20V 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 4.5V QGS QGD QG Chargetd(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)

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