AP0903GH A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 9mΩ ▼ Fast Switching Characteristic ID 51A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.2 ℃/W Rthj-a 62.5 ℃/W Data & specifications subject to change without notice AP0903GH RoHS-compliant Product Parameter Rating Drain-Source Voltage 30 Total Power Dissipation Gate-Source Voltage ±20 Continuous Drain Current 51 Continuous Drain Current 32.5 Pulsed Drain Current 1 200 Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 200812112 Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount)3 G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - - 9 m Ω VGS=4.5V, ID=20A - - 14.5 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=30A - 30 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=±20V - - ±100 nA Qg Total Gate Charge2 ID=20A - 6.5 10.5 nC Qgs Gate-Source Charge V DS=24V - 1.8 nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 3.7 nC td(on) Turn-on Delay Time2 VDS=15V - 6 - ns tr Rise Time I D=20A - 56 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 15 - ns tf Fall Time R D=0.75Ω - 3.7 - ns Ciss Input Capacitance V GS=0V - 600 960 pF Coss Output Capacitance V DS=25V - 185 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF Rg Gate Resistance f=1.0MHz - 2.5 3.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=30A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 23 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP0903GH 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 7 .0V 6.0V 5.0 V V G =4.0V 120 160 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0 V 6.0V 5.0 V V G = 4.0 V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =30A V G =10V 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =20A T C =25 o C 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 02468 1 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =20A V DS =15V V DS =18V V DS =24V 200 400 600 800 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 4.5V QGS QGD QG Chargetd(on) tr td(off) tf VDS VGS 10% 90%