AP05N50EH-HF_14 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 500V ▼ Fast Switching Characteristic RDS(ON) 1.6Ω ▼ Simple Drive Requirement ID 5A ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation4 W EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.7 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice 201008041 Storage Temperature Range -55 to 150 Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Parameter +30 Rating 500 Halogen-Free Product 73.5 12.5 -55 to 150 The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP05N50EJ) is available for low-profile applications. G D S G D S TO-251(J)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 500 - - V RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=2A - - 1.6 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=2A - 3.5 - S IDSS Drain-Source Leakage Current VDS=400V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+25V, VDS=0V - - + 10 uA Qg Total Gate Charge3 ID=1A - 20 32 nC Qgs Gate-Source Charge V DS=400V - 4 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 8 - nC td(on) Turn-on Delay Time3 VDD=250V - 10 - ns tr Rise Time I D=1A - 4 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 7- ns tf Fall Time V GS=10V - 18 - ns Ciss Input Capacitance V GS=0V - 775 1240 pF Coss Output Capacitance V DS=25V - 75 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Rg Gate Resistance f=1.0MHz - 3.5 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=2A, VGS=0V - - 1.5 V trr Reverse Recovery Time3 IS=2A, VGS=0V, - 250 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 1.75 - uC Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting T j=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=5A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP05N50EH/J-HF 4.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.8 0.9 1.1 1.2 -40 0 40 80 120 T j , Junction Temperature ( o C) Normalized BVDSS (V) 0 4 8 1 21 62 02 4 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8.0V 7.0V 6.0V V G =5.0V -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =2A V G =10V 0 5 10 15 20 25 30 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 8.0V 7.0V 6.0V V G =5.0V V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o CT j = 25 o C 0.5 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) I D =250uA I D =1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 4 8 12 16 20 24 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1A V DS =400V 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge Operation in this area limited by RDS(ON)