AP05N20GH-HF_14 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 200V ▼ Lower Gate Charge RDS(ON) 600mΩ ▼ Fast Switching Characteristics ID 5.8A ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation W TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 2.8 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice -55 to 150 Halogen-Free Product 201110062 Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Parameter Rating 200 5.8 3.7 -55 to 150 Parameter +20 Storage Temperature Range 44.6 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP05N20GJ) are available for low-profile applications. G D S G D S TO-252(H) G D S TO-251(J)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 200 - - V VGS=10V, ID=5A - - 600 m Ω VGS=4.5V, ID=2A - - 620 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=5A - 7 - S IDSS Drain-Source Leakage Current VDS=160V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=5A - 30 48 nC Qgs Gate-Source Charge V DS=160V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 11.5 - nC td(on) Turn-on Delay Time2 VDD=100V - 6 - ns tr Rise Time I D=5A - 8.5 - ns td(off) Turn-off Delay Time R G=3.3Ω -3 0 - ns tf Fall Time V GS=10V - 5 - ns Ciss Input Capacitance V GS=0V - 530 850 pF Coss Output Capacitance V DS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 35 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=5A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=5A, VGS=0V, - 190 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 1.6 - uC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. RDS(ON) Static Drain-Source On-Resistance2 AP05N20GH/J-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.6 0.8 1.2 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) 0.4 0.8 1.2 1.6 2.4 2.8 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =5A V GS =10V 0 8 16 24 32 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 8.0V 7.0V 6.0V V G =5.0V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th) (V) I D =1mA 0 8 16 24 32 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 8.0V 7.0V 6.0V V G =5.0V I D =1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 200 400 600 800 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =5A V DS =100V V DS =120V V DS =160V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON)