AP0503GMA A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ SO-8 similar area footprint and pin assignment BVDSS 30V ▼ Low Gate Drive Voltage RDS(ON) 4.2mΩ ▼ Lower On-resistance ID 75A ▼ RoHS Compliant

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ EAS Single Pulse Avalanche Energy4 mJ IAR Avalanche Current A TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 1.8 ℃/W Rthj-a Thermal Resistance Junction-ambient 3 Max. 85 ℃/W Data & specifications subject to change without notice Parameter Operating Junction Temperature Range Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range 0.6 -55 to 150 200429052-1/4 Thermal Data Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 4.5V Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V -55 to 150 ±12 300 AP0503GMA Rating Pb Free Plating Product The APAK-5 package is preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S S S S G D APAK-5

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.018 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - - 4.2 mΩ VGS=4.5V, ID=30A - - 6 mΩ VGS=2.5V, ID=20A - - 9 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance V DS=5V, ID=30A - 88 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±12V - - ±100 nA Qg Total Gate Charge2 ID=30A - 52 83 nC Qgs Gate-Source Charge V DS=24V - 8 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 21 - nC td(on) Turn-on Delay Time2 VDS=15V - 19 - ns tr Rise Time I D=30A - 83 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=5V - 60 - ns tf Fall Time R D=0.5Ω - 115 - ns Ciss Input Capacitance V GS=0V - 5130 8200 pF Coss Output Capacitance V DS=25V - 620 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 360 - pF Rg Gate Resistance f=1.0MHz - 0.85 1.3 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=45A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=30A, VGS=0V, - 38 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 30 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board. 4.Starting T j=25oC , VDD=25V , L=0.1mH , RG=25Ω AP0503GMA

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 100 150 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =1.5V 5.0V 4.5V 3.5V 2.5V 100 150 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) V G = 1.5 V 5.0 V 4.5 V 3.5 V 2.5V T C =15 0 o C 0.5 0.9 1.3 1.7 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =30A V G =4.5V 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Is (A) T j =25 o CT j =150 o C 02468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2 0A T c =25 ℃

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 6 11 16 21 26 31 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 30 60 90 120 150 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V V DS =20V V DS =24V I D =30A 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 1ms 10ms 100ms DC 100 01234 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse