AP04N70BI-HF_14 A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V ▼ Fast Switching Characteristic RDS(ON) 2.4Ω ▼ Simple Drive Requirement ID 4A ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 3.8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data & specifications subject to change without notice Rating 600 -55 to 150 Parameter Storage Temperature Range -55 to 150 201102253 Linear Derating Factor 0.26 Parameter +30 2.5 AP04N70BI-HF Halogen-Free Product G D S G D S TO-220CFM(I) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for all commercial-industrial through hole applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 600 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=2A - - 2.4 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=2A - 2.5 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125oC) VDS=480V,VGS=0V - - 500 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge3 ID=4A - 16.7 - nC Qgs Gate-Source Charge V DS=480V - 4.1 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 4.9 - nC td(on) Turn-on Delay Time3 VDD=300V - 11 - ns tr Rise Time I D=4A - 8.3 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 23.8 - ns tf Fall Time R D=75Ω - 8.2 - ns Ciss Input Capacitance V GS=0V - 950 - pF Coss Output Capacitance V DS=25V - 65 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 4 A ISM Pulsed Source Current ( Body Diode )1 -- 1 5 A VSD Forward On Voltage3 Tj=25℃, IS=4A, VGS=0V - - 1.5 V Notes: 1.Pulse width limited by max. junction temperature 2.Starting T j=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=4A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP04N70BI-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) 0.4 0.8 1.2 1.6 2.4 2.8 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) V G =10V I D =2A 0.5 1.5 02468 1 0 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =4.0V V G =3.5V V G =4.5V V G =5.0V V G =6.0V V G =10V 0.5 1.5 2.5 01234567 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =10V V G =6.0V V G =5.0V V G =4.5V V G =4.0V

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 0 50 100 150 T c , Case Temperature ( o C ) PD (W) 0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150 T c , Case Temperature ( o C ) ID , Drain Current (A) 0.01 0.1 100 1 10 100 1000 V DS (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSEDC

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =4A V DS =480V V DS =400V V DS =320V 0.1 100 V SD (V) IS (A) T j = 25 o CT j =150 o C 100 10000 1 6 11 16 21 26 31 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA