AP04N70BI A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V ▼ Fast Switching Characteristic RDS(ON) 2.4Ω ▼ Simple Drive Requirement ID 4A

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 3.8 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃/W Data & specifications subject to change without notice 2.5 Rating 600 -55 to 150 Parameter Storage Temperature Range -55 to 150 200302072-1/6 100 ±30 Linear Derating Factor 0.26 Parameter AP04N70BI RoHS-compliant Product G D S G D S TO-220CFM(I) The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 600 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=2A - - 2.4 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=2A - 2.5 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=480V,VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=±30V - - ±100 nA Qg Total Gate Charge3 ID=4A - 16.7 - nC Qgs Gate-Source Charge V DS=480V - 4.1 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 4.9 - nC td(on) Turn-on Delay Time3 VDD=300V - 11 - ns tr Rise Time I D=4A - 8.3 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 23.8 - ns tf Fall Time R D=75Ω - 8.2 - ns Ciss Input Capacitance V GS=0V - 950 - pF Coss Output Capacitance V DS=25V - 65 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 4 A ISM Pulsed Source Current ( Body Diode )1 -- 1 5 A VSD Forward On Voltage3 Tj=25℃, IS=4A, VGS=0V - - 1.5 V Notes: 1.Pulse width limited by max. junction temperature 2.Starting Tj=25 oC , VDD=50V , L=25mH , RG=25Ω , IAS=4A. 3.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT AP04N70BI

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature AP04N70BI 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) 0.4 0.8 1.2 1.6 2.4 2.8 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) V G =10V I D =2A 0.5 1.5 02468 1 0 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =4.0V V G =3.5V V G =4.5V V G =5.0V V G =6.0V V G =10V 0.5 1.5 2.5 01234567 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =10V V G =6.0V V G =5.0V V G =4.5V V G =4.0V

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP04N70BI 0 50 100 150 T c , Case Temperature ( o C ) PD (W) 0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150 T c , Case Temperature ( o C ) ID , Drain Current (A) 0.01 0.1 100 1 10 100 1000 V DS (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSEDC

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP04N70BI -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =4A V DS =480V V DS =400V V DS =320V 0.1 100 V SD (V) IS (A) T j = 25 o CT j =150 o C 100 10000 1 6 11 16 21 26 31 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform AP04N70BI td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA