AP04N70BF-H A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Dynamic dv/dt Rating BVDSS 700V ▼ Repetitive Avalanche Rated RDS(ON) 2.4Ω ▼ Fast Switching ID 4A ▼ Simple Drive Requirement ▼ RoHS Compliant

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 3.8 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃/W Data & specifications subject to change without notice Linear Derating Factor 0.26 -55 to 150 Parameter AP04N70BF-H 100 Rating 700 Pb Free Plating Product Parameter 200704051-1/6 ±30 2.5 Storage Temperature Range -55 to 150 G D S G D S TO-220FM AP04N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220FM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220FM package is universally preferred for all commercial- industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 700 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=2A - - 2.4 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=2A - 2.5 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=480V,VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=±30V - - ±100 nA Qg Total Gate Charge3 ID=4A - 16.7 - nC Qgs Gate-Source Charge V DS=480V - 4.1 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 4.9 - nC td(on) Turn-on Delay Time3 VDD=300V - 11 - ns tr Rise Time I D=4A - 8.3 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 23.8 - ns tf Fall Time R D=75Ω - 8.2 - ns Ciss Input Capacitance V GS=0V - 950 - pF Coss Output Capacitance V DS=25V - 65 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 4 A ISM Pulsed Source Current ( Body Diode )1 -- 1 5 A VSD Forward On Voltage3 Tj=25℃, IS=4A, VGS=0V - - 1.5 V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 oC , VDD=50V , L=25mH , RG=25Ω , IAS=4A. 3.Pulse width <300us , duty cycle <2%. AP04N70BF-H

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature AP04N70BF-H 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) 0.4 0.8 1.2 1.6 2.4 2.8 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) V G =10V I D =2A 0.5 1.5 02468 1 0 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =4.0V V G =3.5V V G =4.5V V G =5.0V V G =6.0V V G =10V 0.5 1.5 2.5 01234567 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =10V V G =6.0V V G =5.0V V G =4.5V V G =4.0V

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP04N70BF-H 0 50 100 150 T c , Case Temperature ( o C ) PD (W) 0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150 T c , Case Temperature ( o C ) ID , Drain Current (A) 0.01 0.1 100 1 10 100 1000 10000 V DS (V) ID (A) T c =25 o C Single Pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP04N70BF-H -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =4A V DS =480V V DS =400V V DS =320V 0.1 100 V SD (V) IS (A) T j = 25 o C T j =150 o C 100 10000 1 6 11 16 21 26 31 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform AP04N70BF-H td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED V DS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA