AP04N70BF-A A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Dynamic dv/dt Rating BVDSS 650V ▼ Repetitive Avalanche Rated RDS(ON) 2.4Ω ▼ Fast Switching ID 4A ▼ Simple Drive Requirement ▼ RoHS Compliant

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 3.8 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃/W Data & specifications subject to change without notice Linear Derating Factor 0.26 -55 to 150 Parameter AP04N70BF-A 100 Rating 650 Pb Free Plating Product Parameter 200704051-1/4 ±30 2.5 Storage Temperature Range -55 to 150 G D S G D S TO-220FM AP04N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220FM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220FM package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 650 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=2A - - 2.4 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=2A - 2.5 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=480V,VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=±30V - - ±100 nA Qg Total Gate Charge3 ID=4A - 16.7 - nC Qgs Gate-Source Charge V DS=480V - 4.1 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 4.9 - nC td(on) Turn-on Delay Time3 VDD=300V - 11 - ns tr Rise Time I D=4A - 8.3 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 23.8 - ns tf Fall Time R D=75Ω - 8.2 - ns Ciss Input Capacitance V GS=0V - 950 - pF Coss Output Capacitance V DS=25V - 65 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 4 A ISM Pulsed Source Current ( Body Diode )1 -- 1 5 A VSD Forward On Voltage3 Tj=25℃, IS=4A, VGS=0V - - 1.5 V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 oC , VDD=50V , L=25mH , RG=25Ω , IAS=4A. 3.Pulse width <300us , duty cycle <2%. AP04N70BF-A

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP04N70BF-A 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =2A V G =10V 0.6 1.2 1.8 0369 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =3.5V 10V 6.0V 5.0V 4.5V 4.0V 0.5 1.5 2.5 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =4.0V 10V 6.0V 5.0V 4.5V 0.1 100 V SD (V) IS (A) T j = 25 o CT j =150 o C -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP04N70BF-A 0.01 0.1 100 1 10 100 1000 10000 V DS (V) ID (A) T c =25 o C Single Pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 5 10 15 20 25 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =4A V DS =320V V DS =400V V DS =480V 100 10000 1 6 11 16 21 26 31 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge