AP03N70I-H-HF

AP03N70I-H-HF_14 A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V ▼ Fast Switching Speed RDS(ON) 4.4Ω ▼ Simple Drive Requirement ID 2.5A ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4.3 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data & specifications subject to change without notice Linear Derating Factor 0.23 Parameter 2.5 Parameter -55 to 150 +30 201305285 2.5 1.6 Storage Temperature Range -55 to 150 Rating 700 Halogen-Free Product AP03N70I-H-HF G D S G D S TO-220CFM(I) AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost- effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 700 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=1.2A - - 4.4 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=1.6A - 2 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V - - 500 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge3 ID=1A - 12 20 nC Qgs Gate-Source Charge V DS=480V - 3 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 4 - nC td(on) Turn-on Delay Time3 VDD=300V - 8.5 - ns tr Rise Time I D=2.5A - 6 - ns td(off) Turn-off Delay Time R G=10Ω,VGS=10V - 19 - ns tf Fall Time R D=120Ω -8- ns Ciss Input Capacitance V GS=0V - 590 950 pF Coss Output Capacitance V DS=25V - 50 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=3A, VGS=0V - - 1.5 V trr Reverse Recovery Time3 IS=3A, VGS=0V, - 407 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 2110 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting T j=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=2.5A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP03N70I-H-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP03N70I-H-HF 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 5.0V 4.5V V G =4.0V 10V 6.0V 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =3.5V 4.5V 4.0V 10V 5.0V 0.0 1.0 2.0 3.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =1.6A V G =10V 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) 0.01 0.1 100 V SD , Source-to-Drain Voltage (V) IS (A) T j = 25 o CT j = 150 o C 0.4 0.6 0.8 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 048 1 2 1 6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1A V DS =480V 200 400 600 800 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 1 10 100 1000 10000 V DS , Drain-to-Source Voltage (V) ID (A) 100us 1ms 10ms 100ms DC T c =25 o C Single Pulse Operation in this area limited by RDS(ON)