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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 400V ▼ Fast Switching Characteristic RDS(ON) 2.6Ω ▼ Simple Drive Requirement ID 2.7A ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation3 W TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 2.8 ℃/W Rthj-a 62.5 ℃/W Data & specifications subject to change without notice Storage Temperature Range -55 to 150 Parameter Parameter +20 Rating 400 Halogen-Free Product 2.7 44.6 -55 to 150 201303151 Maximum Thermal Resistance, Junction-ambient (PCB mount)3 AP03N40A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-252 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for high current application due to the lo w connection resistance. G D S G D S TO-252(H)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 400 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=1.3A - - 2.6 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=1.3A - 2 - S IDSS Drain-Source Leakage Current VDS=320V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=1A - 11 17.5 nC Qgs Gate-Source Charge V DS=320V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 5 - nC td(on) Turn-on Delay Time V DD=200V - 8 - ns tr Rise Time I D=1A - 4.5 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 7- ns tf Fall Time V GS=10V - 10 - ns Ciss Input Capacitance V GS=0V - 370 600 pF Coss Output Capacitance V DS=25V - 45 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 9 - pF Rg Gate Resistance f=1.0MHz - 3.2 6.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.3A, VGS=0V - - 1.5 V trr Reverse Recovery Time I S=1A, VGS=0V, - 150 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 820 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP03N40AH-HF 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS 0 8 16 24 32 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8.0V 7.0V 6.0V V G =5.0V -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =1.3A V G =10V 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 8.0V 7.0V 6.0V V G =5.0V 0.4 0.8 1.2 1.6 V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o CT j = 25 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA I D =1mA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms 100ms DC 0 4 8 12 16 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1A V DS =320V 100 200 300 400 500 600 1 5 9 1 31 72 12 52 9 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge Operation in this area limited by RDS(ON)