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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V ▼ ESD Improved Capability RDS(ON) 7Ω ▼ Simple Drive Requirement ID 1.6A ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data & specifications subject to change without notice 201301041 Halogen-Free Product 1.6 +20 1.6 AP02N70EI-HF Parameter Rating 700 Storage Temperature Range -55 to 150 6.4 27.8 -55 to 150 Parameter AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost- effectiveness . The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. S G D G D S TO-220CFM(I)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 700 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=0.8A - - 7 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=0.8A - 0.65 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 10 uA Qg Total Gate Charge I D=0.8A - 17 30 nC Qgs Gate-Source Charge V DS=560V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 11 - nC td(on) Turn-on Delay Time V DD=350V - 10 - ns tr Rise Time I D=0.8A - 8 - ns td(off) Turn-off Delay Time R G=4.7Ω -2 1- ns tf Fall Time V GS=10V - 15 - ns Ciss Input Capacitance V GS=0V - 170 300 pF Coss Output Capacitance V DS=25V - 30 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 20 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage3 IS=1.6A, VGS=0V - - 1.5 V trr Reverse Recovery Time I S=1.6A, VGS=0V, - 340 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 2550 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting T j=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP02N70EI-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 9.0V 8.0V 7.0V V G =6.0V V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 9.0V 8.0V 7.0V V G =6.0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( ℃) Normalized RDS(ON) I D =0.8A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.6 0.8 1.2 1.4 -50 0 50 100 150 Tj , Junction Temperature ( ℃) Normalized BVDSS (V) 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T j , Junction Temperature ( ℃) Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0 4 8 12 16 20 24 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =0.8A V DS =560V 100 1000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 10V QGS QGD QG Charge 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC td(on) tr td(off) tf VDS VGS 10% 90%