AP02N60I A-POWER | Alldatasheet

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N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Repetitive Avalanche Rated BVDSS 600V ▼ Fast Switching RDS(ON) ▼ Simple Drive Requirement ID

Description

V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG TJ Operating Junction Temperature Range Thermal Data Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 5.7 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. ℃/W Data & specifications subject to change without notice 200117032 AP02N60I -55 to 150 Parameter 1.26 Parameter Rating 600 Storage Temperature Range -55 to 150 3.6 Linear Derating Factor 0.176 ± 30 G DS TO-220CFM(I) The TO-220CFM package is universally preferred for all commercial- industrial applications. The device is suited for switch mode power supplies ,AC-DC converters and high current high speed switching circuits. G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA 0.6 V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA V gfs Forward Transconductance VDS=20V, ID=1A 0.2 S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V uA Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V 100 uA IGSS Gate-Source Leakage VGS= nA Qg Total Gate Charge3 ID=2A nC Qgs Gate-Source Charge VDS=480V nC Qgd Gate-Drain ("Miller") Charge VGS=10V 8.5 nC td(on) Turn-on Delay Time3 VDS=300V 9.5 ns tr Rise Time ID=2A ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V ns tf Fall Time RD=150Ω ns Ciss Input Capacitance VGS=0V 155 pF Coss Output Capacitance VDS=25V pF Crss Reverse Transfer Capacitance f=1.0MHz pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V A ISM Pulsed Source Current ( Body Diode )1 3.6 A VSD Forward On Voltage3 Tj=25℃, IS=2A, VGS=0V 1.5 V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=40mH , RG=25Ω , IAS=2A. 3.Pulse width <300us , duty cycle <2%. AP02N60I ± 30V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 0.8 0.9 1.1 1.2 -50 100 150 T j , Junction Temperature ( oC) Normalized BVDSS (V) 0.4 0.8 1.2 1.6 2.4 2.8 -50 100 150 T j , Junction Temperature ( oC ) Normalized RDS(ON) V GS=10V I D=1A 0.5 1.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C=25 oC 10V 5.5V 6.0V 5.0V V GS=4.5V 0.2 0.4 0.6 0.8 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C=150 oC 10V 5.5V 6.0V 5.0V V GS=4.5V

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 100 150 Tc, Case Temperature ( oC ) PD (W) 0.4 0.8 1.2 1.6 2.4 100 125 150 T c , Case Temperature ( oC ) ID , Drain Current (A) 0.01 0.1 100 1000 10000 V DS (V) ID (A) T C=25 oC Single Pulse 100us 1ms 10ms 100ms 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature -50 100 150 T j , Junction Temperature ( oC ) VGS(th) (V) 0.1 100 0.2 0.4 0.6 0.8 1.2 1.4 1.6 V SD (V) IS (A) T j = 150 oC T j = 25 oC Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D=2A V DS=320V V DS=400V V DS=480V 100 1000 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS ID IG 1~ 3 mA