AP01N60J-HF A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V ▼ Fast Switching Characteristics RDS(ON) 8Ω ▼ Simple Drive Requirement ID 1.6A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V A ID@TC=100℃ Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice 1 201501064 1.6 +30 0.5 AP01N60J-HF 1.6 Halogen-Free Product Parameter Rating 600 -55 to 150 Storage Temperature Range -55 to 150 Parameter G D S G D S TO-251(J)AP01N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The straight lead version TO-251 package is widely preferred for all commercial-industrial through hole applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 600 - - V RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=0.8A - - 8 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=50V, ID=0.8A - 0.8 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge3 ID=1.6A - 7.7 - nC Qgs Gate-Source Charge V DS=480V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 2.6 - nC td(on) Turn-on Delay Time3 VDD=300V - 8 - ns tr Rise Time I D=1.6A - 5 - ns td(off) Turn-off Delay Time R G=10Ω -1 4- ns tf Fall Time V GS=10V - 7 - ns Ciss Input Capacitance V GS=0V - 286 - pF Coss Output Capacitance V DS=25V - 25 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 5 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 1.6 A ISM Pulsed Source Current ( Body Diode )1 --6 A VSD Forward On Voltage3 Tj=25℃, IS=1.6A, VGS=0V - - 1.5 V Notes: 1.Pulse width limited by max. junction. 2.Starting T j=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP01N60J-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =0.8A V G =10V 0.5 1.5 0 5 10 15 20 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 6.0V 5.5V 5.0V V G = 4.5 V 0.2 0.4 0.6 0.8 0 5 10 15 20 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 6.0V 5.5V 5.0V V G = 4.5 V 0.1 100 V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o C T j = 25 o C 0.4 0.8 1.2 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized VGS(th)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 02468 1 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1.6A V DS =480V 100 1000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge Operation in this area limited by RDS(ON)

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