AP01L60T A-POWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 600V ▼ Fast Switching Characteristics RDS(ON) 12Ω ▼ Simple Drive Requirement ID 160mA

Description

V VGS Gate-Source Voltage V ID@TA=25℃ Continuous Drain Current, VGS @ 10V mA ID@TA=100℃ Continuous Drain Current, VGS @ 10V mA IDM Pulsed Drain Current1 mA PD@TC=25℃ Total Power Dissipation W TSTG TJ Operating Junction Temperature Range Thermal Data Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient Max. 150 ℃/W Data & specifications subject to change without notice 200530031 Storage Temperature Range -55 to 150 300 0.83 100 Parameter Rating 600 AP01L60T -55 to 150 Parameter 160 ± 30 G D S TO-92 G D S Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is universally used for all commercial-industrial applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA 0.8 V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=0.5A Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA V gfs Forward Transconductance VDS=10V, ID=0.5A 0.8 S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V uA Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V 100 uA IGSS Gate-Source Leakage VGS= nA Qg Total Gate Charge3 ID=1A 4.0 nC Qgs Gate-Source Charge VDS=480V 1.0 nC Qgd Gate-Drain ("Miller") Charge VGS=10V 1.1 nC td(on) Turn-on Delay Time3 VDD=300V 6.6 ns tr Rise Time ID=1A 5.0 ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V 11.7 ns tf Fall Time RD=300Ω 9.2 ns Ciss Input Capacitance VGS=0V 170 pF Coss Output Capacitance VDS=25V 30.7 pF Crss Reverse Transfer Capacitance f=1.0MHz 5.1 pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V 160 mA VSD Forward On Voltage3 IS=160mA, VGS=0V 1.2 V Notes: 1.Pulse width limited by safe operating area. 3.Pulse width <300us , duty cycle <2%. AP01L60T ± 30V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.4 0.8 1.2 1.6 2.4 2.8 -50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =0.5A V GS =10V 0.5 1.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 6.0V 5.5V 5.0V V GS =4.5V 0.25 0.5 0.75 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 5.0V 4.5V V GS =4.0V 0.01 0.1 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o C T j = 25 o C -50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 0.8 0.9 1.1 1.2 -50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Drain Current v.s. Fig 10. Typical Power Dissipation Case Temperature Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 1.5 4.5 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1.0A V DS =480V 100 1000 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss td(on) tr td(off)tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 100 150 T A , Case Temperature ( o C ) PD (W) 0.3 0.6 0.9 1.2 100 125 150 T A , Case Temperature ( o C ) ID , Drain Current (A)